Effect of the sintering temperature on the electrical properties of Y–Al‐doped ZnO varistors
Abstract To investigate the relationship between the electrical properties of Y–Al doped ZnO varistors and sintering temperature, in this study, we measured the voltage–current characteristics and electrical performance parameters of samples sintered at 1100∘C–1300∘C. Scanning electron microscopy ob...
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| Format: | Article |
| Language: | English |
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Wiley
2025-01-01
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| Series: | International Journal of Ceramic Engineering & Science |
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| Online Access: | https://doi.org/10.1002/ces2.10243 |
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| author | Lei Wang Hang Zhang Kexin Zhang Yubo Shen Limin Qu Yue Yin Pengfei Meng Jingke Guo |
| author_facet | Lei Wang Hang Zhang Kexin Zhang Yubo Shen Limin Qu Yue Yin Pengfei Meng Jingke Guo |
| author_sort | Lei Wang |
| collection | DOAJ |
| description | Abstract To investigate the relationship between the electrical properties of Y–Al doped ZnO varistors and sintering temperature, in this study, we measured the voltage–current characteristics and electrical performance parameters of samples sintered at 1100∘C–1300∘C. Scanning electron microscopy observations revealed that as the sintering temperature increased, the grain size grew significantly, leading to a reduction in voltage gradient. Through C--V characteristic testing, X‐ray diffraction and energy dispersive X‐ray spectroscopy analysis, it was found that the increase in sintering temperature promoted the formation of interface negative charge and defect reactions by Y3+, increasing Ni and Nd; Al3+ tends to aggregate in the grain area, further increasing Nd; the volatilization of Bi3+ gradually increases, causing a decrease in Ni; the Φb first increases and then decreases with the changes in Ni and Nd, resulting in a U‐shaped variation characteristic of the nonlinear coefficient and leakage current density. At a sintering temperature of 1200∘C, the performance of ZnO varistors is optimal. |
| format | Article |
| id | doaj-art-17a4f6d8003845708af35efc379f638c |
| institution | Kabale University |
| issn | 2578-3270 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Ceramic Engineering & Science |
| spelling | doaj-art-17a4f6d8003845708af35efc379f638c2025-01-21T08:44:30ZengWileyInternational Journal of Ceramic Engineering & Science2578-32702025-01-0171n/an/a10.1002/ces2.10243Effect of the sintering temperature on the electrical properties of Y–Al‐doped ZnO varistorsLei Wang0Hang Zhang1Kexin Zhang2Yubo Shen3Limin Qu4Yue Yin5Pengfei Meng6Jingke Guo7State Grid Heilongjiang Electric Power Co.Ltd. Electric Power Research InstituteHarbin ChinaState Grid Heilongjiang Electric Power Co.Ltd. Electric Power Research InstituteHarbin ChinaState Grid Heilongjiang Electric Power Co.Ltd. Electric Power Research InstituteHarbin ChinaState Grid Heilongjiang Electric Power Co.Ltd. Electric Power Research InstituteHarbin ChinaState Grid Heilongjiang Electric Power Co.Ltd. Electric Power Research InstituteHarbin ChinaCollege of Electrical Engineering, Sichuan UniversityChengduChinaCollege of Electrical Engineering, Sichuan UniversityChengduChinaCollege of Electrical Engineering, Sichuan UniversityChengduChinaAbstract To investigate the relationship between the electrical properties of Y–Al doped ZnO varistors and sintering temperature, in this study, we measured the voltage–current characteristics and electrical performance parameters of samples sintered at 1100∘C–1300∘C. Scanning electron microscopy observations revealed that as the sintering temperature increased, the grain size grew significantly, leading to a reduction in voltage gradient. Through C--V characteristic testing, X‐ray diffraction and energy dispersive X‐ray spectroscopy analysis, it was found that the increase in sintering temperature promoted the formation of interface negative charge and defect reactions by Y3+, increasing Ni and Nd; Al3+ tends to aggregate in the grain area, further increasing Nd; the volatilization of Bi3+ gradually increases, causing a decrease in Ni; the Φb first increases and then decreases with the changes in Ni and Nd, resulting in a U‐shaped variation characteristic of the nonlinear coefficient and leakage current density. At a sintering temperature of 1200∘C, the performance of ZnO varistors is optimal.https://doi.org/10.1002/ces2.10243electrical propertiessintering temperatureY–Al dopingZnO varistor |
| spellingShingle | Lei Wang Hang Zhang Kexin Zhang Yubo Shen Limin Qu Yue Yin Pengfei Meng Jingke Guo Effect of the sintering temperature on the electrical properties of Y–Al‐doped ZnO varistors International Journal of Ceramic Engineering & Science electrical properties sintering temperature Y–Al doping ZnO varistor |
| title | Effect of the sintering temperature on the electrical properties of Y–Al‐doped ZnO varistors |
| title_full | Effect of the sintering temperature on the electrical properties of Y–Al‐doped ZnO varistors |
| title_fullStr | Effect of the sintering temperature on the electrical properties of Y–Al‐doped ZnO varistors |
| title_full_unstemmed | Effect of the sintering temperature on the electrical properties of Y–Al‐doped ZnO varistors |
| title_short | Effect of the sintering temperature on the electrical properties of Y–Al‐doped ZnO varistors |
| title_sort | effect of the sintering temperature on the electrical properties of y al doped zno varistors |
| topic | electrical properties sintering temperature Y–Al doping ZnO varistor |
| url | https://doi.org/10.1002/ces2.10243 |
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