Effect of Oxidation Temperature and Chlorine Source on the Gate Oxidation Process for High Power IGBT

Effect of Oxidation Temperature and Chlorine Source on the Gate Oxidation Process for High Power IGBT

Two main gate oxidation processes of high power IGBT based on dry oxidation and wet oxidation were studied by capacitance-voltage (C-V) method. Effect of oxidation temperature and chlorine source on the quality of gate oxidation, especially on fixed oxide charge (Nss) and interface trapped charge (D...

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Bibliographic Details
Main Authors: ZHANG Quan, LIU Guoyou, HUANG Jianwei
Format: Article
Language:zho
Published: Editorial Office of Control and Information Technology 2015-01-01
Series:Kongzhi Yu Xinxi Jishu
Subjects:
IGBT
gate oxide process
gate oxide charge
oxidation temperature
chlorine source
Online Access:http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2015.06.009
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