APA (7th ed.) Citation

Quan, Z., Guoyou, L., & Jianwei, H. Effect of Oxidation Temperature and Chlorine Source on the Gate Oxidation Process for High Power IGBT. Editorial Office of Control and Information Technology.

Chicago Style (17th ed.) Citation

Quan, ZHANG, LIU Guoyou, and HUANG Jianwei. Effect of Oxidation Temperature and Chlorine Source on the Gate Oxidation Process for High Power IGBT. Editorial Office of Control and Information Technology.

MLA (9th ed.) Citation

Quan, ZHANG, et al. Effect of Oxidation Temperature and Chlorine Source on the Gate Oxidation Process for High Power IGBT. Editorial Office of Control and Information Technology.