Single-layer graphene oxide film grown on α-Al2O3(0001) for use as an adsorbent
Graphene oxide (GO) is expected to be one of the most promising adsorbents for metal ions, including radioactive nuclides in aqueous solutions. Large-area and single-layer graphene oxide (SLGO) grown on α-Al2O3(0001) was used as a model structure of GO since the aggregation and re-stacking of the GO...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Beilstein-Institut
2025-07-01
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| Series: | Beilstein Journal of Nanotechnology |
| Subjects: | |
| Online Access: | https://doi.org/10.3762/bjnano.16.79 |
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| Summary: | Graphene oxide (GO) is expected to be one of the most promising adsorbents for metal ions, including radioactive nuclides in aqueous solutions. Large-area and single-layer graphene oxide (SLGO) grown on α-Al2O3(0001) was used as a model structure of GO since the aggregation and re-stacking of the GO sheets prevent the adequate analysis of the adsorption state. The SLGO film was obtained by oxidizing monolayer graphene grown by metal-free chemical vapor deposition on the α-Al2O3(0001) surface, and the adsorption state was determined by surface analytical techniques. It was clarified that Cs adsorbs on oxygen functional groups by substituting with H atoms from carboxyl and hydroxy groups. It is also estimated that the weight adsorption capacity of SLGO in the 1.0 mol/L-Cs aqueous solution is as much as approximately 70 wt %. It has been demonstrated that GO has great potential to be a promising adsorbent for Cs in aqueous solutions. |
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| ISSN: | 2190-4286 |