Effect of Deposition Temperature and Thermal Annealing on the Properties of Sputtered NiO<i><sub>x</sub></i>/Si Heterojunction Photodiodes
NiO<i><sub>x</sub></i> is a p-type semiconductor with excellent stability, which makes it interesting for a wide range of applications. Broadband photodetectors with high responsivity (<i>R</i>) were fabricated by depositing r.f.-sputtered NiO<i><sub>x...
Saved in:
| Main Authors: | , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-01-01
|
| Series: | Inorganics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2304-6740/13/1/11 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832588325874040832 |
|---|---|
| author | Roumen Nedev David Mateos-Anzaldo Eddue Osuna-Escalante Oscar Perez-Landeros Mario Curiel-Alvarez Esteban Osorio-Urquizo Jhonathan Castillo-Saenz Javier Lopez-Medina Benjamin Valdez-Salas Nicola Nedev |
| author_facet | Roumen Nedev David Mateos-Anzaldo Eddue Osuna-Escalante Oscar Perez-Landeros Mario Curiel-Alvarez Esteban Osorio-Urquizo Jhonathan Castillo-Saenz Javier Lopez-Medina Benjamin Valdez-Salas Nicola Nedev |
| author_sort | Roumen Nedev |
| collection | DOAJ |
| description | NiO<i><sub>x</sub></i> is a p-type semiconductor with excellent stability, which makes it interesting for a wide range of applications. Broadband photodetectors with high responsivity (<i>R</i>) were fabricated by depositing r.f.-sputtered NiO<i><sub>x</sub></i> layers on n-Si at room temperature (RT), 50 °C and 100 °C. In self-powered mode the RT diodes have <i>R</i> between 0.95 and 0.39 A/W for wavelengths between 365 and 635 nm, while at a reverse bias of −4 V, the responsivity increases to values between 22 A/W and 10.7 A/W for wavelengths in the same range. The increase of the deposition temperature leads to a decrease of <i>R</i> but also to a smaller reverse dark current. Thus, the 100 °C photodiodes might be more appropriate for applications where high responsivity is required, because of their smaller power consumption compared to the RT diodes. In addition, it was found that the increase of the deposition temperature leads to an increase of the diodes’ series resistance and the resistivity of NiO<i><sub>x</sub></i>. The effect of Rapid Thermal Annealing (RTA) on the properties of the photodiodes was studied. Annealing at 550 °C for 6 min leads to much higher responsivity compared to <i>R</i> of diodes with as-deposited NiO<i><sub>x</sub></i>. However, a disadvantage of the annealed diode is that the reverse current depends on the amplitude and polarity of previously applied bias voltage. The higher responsivity of the RTA photodiodes makes them useful as light sensors. |
| format | Article |
| id | doaj-art-1442838c032b4045b275776e4c91f44a |
| institution | Kabale University |
| issn | 2304-6740 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Inorganics |
| spelling | doaj-art-1442838c032b4045b275776e4c91f44a2025-01-24T13:35:28ZengMDPI AGInorganics2304-67402025-01-011311110.3390/inorganics13010011Effect of Deposition Temperature and Thermal Annealing on the Properties of Sputtered NiO<i><sub>x</sub></i>/Si Heterojunction PhotodiodesRoumen Nedev0David Mateos-Anzaldo1Eddue Osuna-Escalante2Oscar Perez-Landeros3Mario Curiel-Alvarez4Esteban Osorio-Urquizo5Jhonathan Castillo-Saenz6Javier Lopez-Medina7Benjamin Valdez-Salas8Nicola Nedev9Instituto de Ingeniería, Universidad Autónoma de Baja California, Blvd. Benito Juárez s/n, Mexicali C.P. 21280, MexicoInstituto de Ingeniería, Universidad Autónoma de Baja California, Blvd. Benito Juárez s/n, Mexicali C.P. 21280, MexicoInstituto de Ingeniería, Universidad Autónoma de Baja California, Blvd. Benito Juárez s/n, Mexicali C.P. 21280, MexicoInstituto de Ingeniería, Universidad Autónoma de Baja California, Blvd. Benito Juárez s/n, Mexicali C.P. 21280, MexicoInstituto de Ingeniería, Universidad Autónoma de Baja California, Blvd. Benito Juárez s/n, Mexicali C.P. 21280, MexicoInstituto de Ingeniería, Universidad Autónoma de Baja California, Blvd. Benito Juárez s/n, Mexicali C.P. 21280, MexicoInstituto de Ingeniería, Universidad Autónoma de Baja California, Blvd. Benito Juárez s/n, Mexicali C.P. 21280, MexicoConahcyt Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Ensenada C.P. 22800, MexicoInstituto de Ingeniería, Universidad Autónoma de Baja California, Blvd. Benito Juárez s/n, Mexicali C.P. 21280, MexicoInstituto de Ingeniería, Universidad Autónoma de Baja California, Blvd. Benito Juárez s/n, Mexicali C.P. 21280, MexicoNiO<i><sub>x</sub></i> is a p-type semiconductor with excellent stability, which makes it interesting for a wide range of applications. Broadband photodetectors with high responsivity (<i>R</i>) were fabricated by depositing r.f.-sputtered NiO<i><sub>x</sub></i> layers on n-Si at room temperature (RT), 50 °C and 100 °C. In self-powered mode the RT diodes have <i>R</i> between 0.95 and 0.39 A/W for wavelengths between 365 and 635 nm, while at a reverse bias of −4 V, the responsivity increases to values between 22 A/W and 10.7 A/W for wavelengths in the same range. The increase of the deposition temperature leads to a decrease of <i>R</i> but also to a smaller reverse dark current. Thus, the 100 °C photodiodes might be more appropriate for applications where high responsivity is required, because of their smaller power consumption compared to the RT diodes. In addition, it was found that the increase of the deposition temperature leads to an increase of the diodes’ series resistance and the resistivity of NiO<i><sub>x</sub></i>. The effect of Rapid Thermal Annealing (RTA) on the properties of the photodiodes was studied. Annealing at 550 °C for 6 min leads to much higher responsivity compared to <i>R</i> of diodes with as-deposited NiO<i><sub>x</sub></i>. However, a disadvantage of the annealed diode is that the reverse current depends on the amplitude and polarity of previously applied bias voltage. The higher responsivity of the RTA photodiodes makes them useful as light sensors.https://www.mdpi.com/2304-6740/13/1/11NiO<i><sub>x</sub></i>-nSi broadband photodetectorshigh responsivityr.f. sputteringeffect of RTA treatmentlight sensors |
| spellingShingle | Roumen Nedev David Mateos-Anzaldo Eddue Osuna-Escalante Oscar Perez-Landeros Mario Curiel-Alvarez Esteban Osorio-Urquizo Jhonathan Castillo-Saenz Javier Lopez-Medina Benjamin Valdez-Salas Nicola Nedev Effect of Deposition Temperature and Thermal Annealing on the Properties of Sputtered NiO<i><sub>x</sub></i>/Si Heterojunction Photodiodes Inorganics NiO<i><sub>x</sub></i>-nSi broadband photodetectors high responsivity r.f. sputtering effect of RTA treatment light sensors |
| title | Effect of Deposition Temperature and Thermal Annealing on the Properties of Sputtered NiO<i><sub>x</sub></i>/Si Heterojunction Photodiodes |
| title_full | Effect of Deposition Temperature and Thermal Annealing on the Properties of Sputtered NiO<i><sub>x</sub></i>/Si Heterojunction Photodiodes |
| title_fullStr | Effect of Deposition Temperature and Thermal Annealing on the Properties of Sputtered NiO<i><sub>x</sub></i>/Si Heterojunction Photodiodes |
| title_full_unstemmed | Effect of Deposition Temperature and Thermal Annealing on the Properties of Sputtered NiO<i><sub>x</sub></i>/Si Heterojunction Photodiodes |
| title_short | Effect of Deposition Temperature and Thermal Annealing on the Properties of Sputtered NiO<i><sub>x</sub></i>/Si Heterojunction Photodiodes |
| title_sort | effect of deposition temperature and thermal annealing on the properties of sputtered nio i sub x sub i si heterojunction photodiodes |
| topic | NiO<i><sub>x</sub></i>-nSi broadband photodetectors high responsivity r.f. sputtering effect of RTA treatment light sensors |
| url | https://www.mdpi.com/2304-6740/13/1/11 |
| work_keys_str_mv | AT roumennedev effectofdepositiontemperatureandthermalannealingonthepropertiesofsputterednioisubxsubisiheterojunctionphotodiodes AT davidmateosanzaldo effectofdepositiontemperatureandthermalannealingonthepropertiesofsputterednioisubxsubisiheterojunctionphotodiodes AT eddueosunaescalante effectofdepositiontemperatureandthermalannealingonthepropertiesofsputterednioisubxsubisiheterojunctionphotodiodes AT oscarperezlanderos effectofdepositiontemperatureandthermalannealingonthepropertiesofsputterednioisubxsubisiheterojunctionphotodiodes AT mariocurielalvarez effectofdepositiontemperatureandthermalannealingonthepropertiesofsputterednioisubxsubisiheterojunctionphotodiodes AT estebanosoriourquizo effectofdepositiontemperatureandthermalannealingonthepropertiesofsputterednioisubxsubisiheterojunctionphotodiodes AT jhonathancastillosaenz effectofdepositiontemperatureandthermalannealingonthepropertiesofsputterednioisubxsubisiheterojunctionphotodiodes AT javierlopezmedina effectofdepositiontemperatureandthermalannealingonthepropertiesofsputterednioisubxsubisiheterojunctionphotodiodes AT benjaminvaldezsalas effectofdepositiontemperatureandthermalannealingonthepropertiesofsputterednioisubxsubisiheterojunctionphotodiodes AT nicolanedev effectofdepositiontemperatureandthermalannealingonthepropertiesofsputterednioisubxsubisiheterojunctionphotodiodes |