Valence Band Structure of InAs1-xBix and InSb1-xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model
The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs1-xBix and InSb1-xBix alloy systems. It is found that both the heavy/light hole, and spin-orbit split E+ levels move upwards in energy with an increase in Bi content in the al...
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| Format: | Article |
| Language: | English |
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Wiley
2014-01-01
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| Series: | The Scientific World Journal |
| Online Access: | http://dx.doi.org/10.1155/2014/704830 |
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| author | D. P. Samajdar S. Dhar |
| author_facet | D. P. Samajdar S. Dhar |
| author_sort | D. P. Samajdar |
| collection | DOAJ |
| description | The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs1-xBix and InSb1-xBix alloy systems. It is found that both the heavy/light hole, and spin-orbit split E+ levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E− energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data. |
| format | Article |
| id | doaj-art-14002c4ecbc8496e91913fb2529f5aa8 |
| institution | Kabale University |
| issn | 2356-6140 1537-744X |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | The Scientific World Journal |
| spelling | doaj-art-14002c4ecbc8496e91913fb2529f5aa82025-02-03T01:31:30ZengWileyThe Scientific World Journal2356-61401537-744X2014-01-01201410.1155/2014/704830704830Valence Band Structure of InAs1-xBix and InSb1-xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing ModelD. P. Samajdar0S. Dhar1Department of Electronics and Communication Engineering, Heritage Institute of Technology, Chowbaga Road, Anandapur, Kolkata 700107, IndiaDepartment of Electronic Science, University of Calcutta, 92, A. P. C. Road, Kolkata 700009, IndiaThe valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs1-xBix and InSb1-xBix alloy systems. It is found that both the heavy/light hole, and spin-orbit split E+ levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E− energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data.http://dx.doi.org/10.1155/2014/704830 |
| spellingShingle | D. P. Samajdar S. Dhar Valence Band Structure of InAs1-xBix and InSb1-xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model The Scientific World Journal |
| title | Valence Band Structure of InAs1-xBix and InSb1-xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model |
| title_full | Valence Band Structure of InAs1-xBix and InSb1-xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model |
| title_fullStr | Valence Band Structure of InAs1-xBix and InSb1-xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model |
| title_full_unstemmed | Valence Band Structure of InAs1-xBix and InSb1-xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model |
| title_short | Valence Band Structure of InAs1-xBix and InSb1-xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model |
| title_sort | valence band structure of inas1 xbix and insb1 xbix alloy semiconductors calculated using valence band anticrossing model |
| url | http://dx.doi.org/10.1155/2014/704830 |
| work_keys_str_mv | AT dpsamajdar valencebandstructureofinas1xbixandinsb1xbixalloysemiconductorscalculatedusingvalencebandanticrossingmodel AT sdhar valencebandstructureofinas1xbixandinsb1xbixalloysemiconductorscalculatedusingvalencebandanticrossingmodel |