Electrical Switching in Thin Film Structures Based on Transition Metal Oxides
Electrical switching, manifesting itself in the nonlinear current-voltage characteristics with S- and N-type NDR (negative differential resistance), is inherent in a variety of materials, in particular, transition metal oxides. Although this phenomenon has been known for a long time, recent suggesti...
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| Format: | Article |
| Language: | English |
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Wiley
2015-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2015/654840 |
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| _version_ | 1832555025213161472 |
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| author | A. Pergament G. Stefanovich V. Malinenko A. Velichko |
| author_facet | A. Pergament G. Stefanovich V. Malinenko A. Velichko |
| author_sort | A. Pergament |
| collection | DOAJ |
| description | Electrical switching, manifesting itself in the nonlinear current-voltage characteristics with S- and N-type NDR (negative differential resistance), is inherent in a variety of materials, in particular, transition metal oxides. Although this phenomenon has been known for a long time, recent suggestions to use oxide-based switching elements as neuristor synapses and relaxation-oscillation circuit components have resumed the interest in this area. In the present review, we describe the experimental facts and theoretical models, mainly on the basis of the Mott transition in vanadium dioxide as a model object, of the switching effect with special emphasis on the emerging applied potentialities for oxide electronics. |
| format | Article |
| id | doaj-art-12762ba5059b4bf89293ed1d2514505a |
| institution | Kabale University |
| issn | 1687-8108 1687-8124 |
| language | English |
| publishDate | 2015-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Condensed Matter Physics |
| spelling | doaj-art-12762ba5059b4bf89293ed1d2514505a2025-02-03T05:49:45ZengWileyAdvances in Condensed Matter Physics1687-81081687-81242015-01-01201510.1155/2015/654840654840Electrical Switching in Thin Film Structures Based on Transition Metal OxidesA. Pergament0G. Stefanovich1V. Malinenko2A. Velichko3Faculty of Physical Engineering, Petrozavodsk State University, Petrozavodsk 185910, RussiaFaculty of Physical Engineering, Petrozavodsk State University, Petrozavodsk 185910, RussiaFaculty of Physical Engineering, Petrozavodsk State University, Petrozavodsk 185910, RussiaFaculty of Physical Engineering, Petrozavodsk State University, Petrozavodsk 185910, RussiaElectrical switching, manifesting itself in the nonlinear current-voltage characteristics with S- and N-type NDR (negative differential resistance), is inherent in a variety of materials, in particular, transition metal oxides. Although this phenomenon has been known for a long time, recent suggestions to use oxide-based switching elements as neuristor synapses and relaxation-oscillation circuit components have resumed the interest in this area. In the present review, we describe the experimental facts and theoretical models, mainly on the basis of the Mott transition in vanadium dioxide as a model object, of the switching effect with special emphasis on the emerging applied potentialities for oxide electronics.http://dx.doi.org/10.1155/2015/654840 |
| spellingShingle | A. Pergament G. Stefanovich V. Malinenko A. Velichko Electrical Switching in Thin Film Structures Based on Transition Metal Oxides Advances in Condensed Matter Physics |
| title | Electrical Switching in Thin Film Structures Based on Transition Metal Oxides |
| title_full | Electrical Switching in Thin Film Structures Based on Transition Metal Oxides |
| title_fullStr | Electrical Switching in Thin Film Structures Based on Transition Metal Oxides |
| title_full_unstemmed | Electrical Switching in Thin Film Structures Based on Transition Metal Oxides |
| title_short | Electrical Switching in Thin Film Structures Based on Transition Metal Oxides |
| title_sort | electrical switching in thin film structures based on transition metal oxides |
| url | http://dx.doi.org/10.1155/2015/654840 |
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