Mancini, S. A., Jang, S. Y., Chen, Z., Kim, D., Bialy, A., Raghotamacher, B., . . . Sung, W. Investigation of Static Performances of 1.2kV 4H-SiC MOSFETs Fabricated Using All ‘Room Temperature’ Ion Implantations. IEEE.
Chicago Style (17th ed.) CitationMancini, Stephen A., et al. Investigation of Static Performances of 1.2kV 4H-SiC MOSFETs Fabricated Using All ‘Room Temperature’ Ion Implantations. IEEE.
MLA (9th ed.) CitationMancini, Stephen A., et al. Investigation of Static Performances of 1.2kV 4H-SiC MOSFETs Fabricated Using All ‘Room Temperature’ Ion Implantations. IEEE.
Warning: These citations may not always be 100% accurate.