Monolithic integration of circuits in e-mode GaN HEMT technology

Monolithic integration of circuits in e-mode GaN HEMT technology

This work presents a power transistor with monolithically integrated gate driver and auxiliary circuit in the same GaN-on-Si die. It presents the design, the characterization and validation tests in a PCB similarly to a final application for this device. The target application is for USB-C chargers...

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Bibliographic Details
Main Authors: Plinio Bau, Thanh Hai Phung, Stephane Driussi, Thomas Beauchene
Format: Article
Language:English
Published: Elsevier 2025-06-01
Series:Power Electronic Devices and Components
Subjects:
Gallium nitride
HEMTs
Gate drivers
Driver circuits
Monolithic integrated circuits
Power integrated circuits
Online Access:http://www.sciencedirect.com/science/article/pii/S2772370425000148
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Summary:This work presents a power transistor with monolithically integrated gate driver and auxiliary circuit in the same GaN-on-Si die. It presents the design, the characterization and validation tests in a PCB similarly to a final application for this device. The target application is for USB-C chargers and power supplies for data centers. The technology is 650 V pGaN with Schottky gate. Simulation from -40 to 150 °C are performed and also fabrication process variation analysis (SS, FF) compared to typical values (TT).
ISSN:2772-3704

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