The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications
In this paper, AlGaN/GaN high electron mobility transistors (HEMTs) with different thicknesses of unintentional doping GaN (UID-GaN) channels were compared and discussed. In order to discuss the effect of different thicknesses of the UID-GaN layer on iron-doped tails, both AlGaN/GaN HEMTs share the...
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MDPI AG
2024-12-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/16/1/1 |
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| author | Qian Yu Sheng Wu Meng Zhang Ling Yang Xu Zou Hao Lu Chunzhou Shi Wenze Gao Mei Wu Bin Hou Gang Qiu Xiaoning He Xiaohua Ma Yue Hao |
| author_facet | Qian Yu Sheng Wu Meng Zhang Ling Yang Xu Zou Hao Lu Chunzhou Shi Wenze Gao Mei Wu Bin Hou Gang Qiu Xiaoning He Xiaohua Ma Yue Hao |
| author_sort | Qian Yu |
| collection | DOAJ |
| description | In this paper, AlGaN/GaN high electron mobility transistors (HEMTs) with different thicknesses of unintentional doping GaN (UID-GaN) channels were compared and discussed. In order to discuss the effect of different thicknesses of the UID-GaN layer on iron-doped tails, both AlGaN/GaN HEMTs share the same 200 nm GaN buffer layer with an Fe-doped concentration of 8 × 10<sup>17</sup> cm<sup>−3</sup>. Due to the different thicknesses of the UID-GaN layer, the concentration of Fe trails reaching the two-dimensional electron gas (2DEG) varies. The breakdown voltage (Vbr) increases with the high concentration of Fe-doped in GaN buffer layer. However, the mobility of the low concentration of the Fe-doped tail is higher than that of the high concentration of the Fe-doped tail. Therefore, the effect of different thicknesses of UID-GaN on the DC and radio frequency (RF) performance of the device needs to be verified. It provides a reference to the epitaxial design for high-performance GaN HEMTs. |
| format | Article |
| id | doaj-art-113cb2c2f16140cfb13f0fea710e4e16 |
| institution | Kabale University |
| issn | 2072-666X |
| language | English |
| publishDate | 2024-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj-art-113cb2c2f16140cfb13f0fea710e4e162025-01-24T13:41:48ZengMDPI AGMicromachines2072-666X2024-12-01161110.3390/mi16010001The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF ApplicationsQian Yu0Sheng Wu1Meng Zhang2Ling Yang3Xu Zou4Hao Lu5Chunzhou Shi6Wenze Gao7Mei Wu8Bin Hou9Gang Qiu10Xiaoning He11Xiaohua Ma12Yue Hao13School of Microelectronics, Xidian University, Xi’an 710071, ChinaZTE Corporation, Shenzhen 518057, ChinaSchool of Microelectronics, Xidian University, Xi’an 710071, ChinaSchool of Microelectronics, Xidian University, Xi’an 710071, ChinaSchool of Microelectronics, Xidian University, Xi’an 710071, ChinaSchool of Microelectronics, Xidian University, Xi’an 710071, ChinaKey Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, ChinaSchool of Microelectronics, Xidian University, Xi’an 710071, ChinaSchool of Microelectronics, Xidian University, Xi’an 710071, ChinaSchool of Microelectronics, Xidian University, Xi’an 710071, ChinaZTE Corporation, Shenzhen 518057, ChinaSchool of Microelectronics, Xidian University, Xi’an 710071, ChinaSchool of Microelectronics, Xidian University, Xi’an 710071, ChinaSchool of Microelectronics, Xidian University, Xi’an 710071, ChinaIn this paper, AlGaN/GaN high electron mobility transistors (HEMTs) with different thicknesses of unintentional doping GaN (UID-GaN) channels were compared and discussed. In order to discuss the effect of different thicknesses of the UID-GaN layer on iron-doped tails, both AlGaN/GaN HEMTs share the same 200 nm GaN buffer layer with an Fe-doped concentration of 8 × 10<sup>17</sup> cm<sup>−3</sup>. Due to the different thicknesses of the UID-GaN layer, the concentration of Fe trails reaching the two-dimensional electron gas (2DEG) varies. The breakdown voltage (Vbr) increases with the high concentration of Fe-doped in GaN buffer layer. However, the mobility of the low concentration of the Fe-doped tail is higher than that of the high concentration of the Fe-doped tail. Therefore, the effect of different thicknesses of UID-GaN on the DC and radio frequency (RF) performance of the device needs to be verified. It provides a reference to the epitaxial design for high-performance GaN HEMTs.https://www.mdpi.com/2072-666X/16/1/1GaNhigh electron mobility transistorsFe-dopedUID-GaNRF peoformance |
| spellingShingle | Qian Yu Sheng Wu Meng Zhang Ling Yang Xu Zou Hao Lu Chunzhou Shi Wenze Gao Mei Wu Bin Hou Gang Qiu Xiaoning He Xiaohua Ma Yue Hao The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications Micromachines GaN high electron mobility transistors Fe-doped UID-GaN RF peoformance |
| title | The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications |
| title_full | The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications |
| title_fullStr | The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications |
| title_full_unstemmed | The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications |
| title_short | The Effect of Channel Layer Thickness on the Performance of GaN HEMTs for RF Applications |
| title_sort | effect of channel layer thickness on the performance of gan hemts for rf applications |
| topic | GaN high electron mobility transistors Fe-doped UID-GaN RF peoformance |
| url | https://www.mdpi.com/2072-666X/16/1/1 |
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