Analysis of Hot-Carrier Degradation in Small and Large W/L n-Channel Transistors
Device degradation due to hot-carrier in n-channel HEXFETs is shown to be related to the device geometrical structure. The form of I-V characteristics of the body-drain junction is found dependent of the hot-carrier stressing and of the layer dimensions. A large increases of the ideality factor, of...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
1998-01-01
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| Series: | Active and Passive Electronic Components |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1155/1998/69085 |
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| Summary: | Device degradation due to hot-carrier in n-channel HEXFETs is shown to be related to
the device geometrical structure. The form of I-V characteristics of the body-drain
junction is found dependent of the hot-carrier stressing and of the layer dimensions. A
large increases of the ideality factor, of the reverse recombination current, and of the
series resistance are shown to be more significant for small values of L and W. It is
demonstrated that the degradation of parameters is mainly caused by the generation of
interface traps. |
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| ISSN: | 0882-7516 1563-5031 |