Demonstration of an On-Chip TE-Pass Polarizer Based on Radiation Coupling
An on-chip, high-extinction-ratio transverse electric (TE) pass polarizer utilizing a silicon oxynitride (SiON) slab has been proposed and experimentally verified. The power confinement ratio of the mode field is manipulated by using a SiON slab, where most of the power of the transverse magnetic (T...
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IEEE
2024-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/10473059/ |
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| author | Li Zhang Shengjie Tang Cheng Chen Haibin Lv Xiaoping Liu |
| author_facet | Li Zhang Shengjie Tang Cheng Chen Haibin Lv Xiaoping Liu |
| author_sort | Li Zhang |
| collection | DOAJ |
| description | An on-chip, high-extinction-ratio transverse electric (TE) pass polarizer utilizing a silicon oxynitride (SiON) slab has been proposed and experimentally verified. The power confinement ratio of the mode field is manipulated by using a SiON slab, where most of the power of the transverse magnetic (TM) mode is transferred to the upper SiON slab and then attenuated through radiation, while the TE mode passes through with relatively low propagation loss. Experimental results show that our proposed device can achieve an extinction ratio that varies from 20.5 to 32.7 dB in the wavelength range of 790 to 870 nm, with an insertion loss of 0.6 to 1.7 dB. Potentially, this design has lower material refractive index contrast, larger minimum etching size, smaller lengths, and less stray light crosstalk, which is beneficial for systems applications such as gyroscopes. |
| format | Article |
| id | doaj-art-10543b3e984c4abebe46dd449fd02c98 |
| institution | Kabale University |
| issn | 1943-0655 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-10543b3e984c4abebe46dd449fd02c982025-01-24T00:00:25ZengIEEEIEEE Photonics Journal1943-06552024-01-011621510.1109/JPHOT.2024.337770710473059Demonstration of an On-Chip TE-Pass Polarizer Based on Radiation CouplingLi Zhang0https://orcid.org/0009-0001-5808-7976Shengjie Tang1https://orcid.org/0000-0003-3272-2924Cheng Chen2https://orcid.org/0009-0006-9334-9106Haibin Lv3https://orcid.org/0000-0002-3064-9818Xiaoping Liu4https://orcid.org/0000-0001-7955-2067School of Physical Science and Technology, ShanghaiTech University, Shanghai, ChinaSchool of Physical Science and Technology, ShanghaiTech University, Shanghai, ChinaSchool of Physical Science and Technology, ShanghaiTech University, Shanghai, ChinaSchool of Physical Science and Technology, ShanghaiTech University, Shanghai, ChinaSchool of Physical Science and Technology, ShanghaiTech University, Shanghai, ChinaAn on-chip, high-extinction-ratio transverse electric (TE) pass polarizer utilizing a silicon oxynitride (SiON) slab has been proposed and experimentally verified. The power confinement ratio of the mode field is manipulated by using a SiON slab, where most of the power of the transverse magnetic (TM) mode is transferred to the upper SiON slab and then attenuated through radiation, while the TE mode passes through with relatively low propagation loss. Experimental results show that our proposed device can achieve an extinction ratio that varies from 20.5 to 32.7 dB in the wavelength range of 790 to 870 nm, with an insertion loss of 0.6 to 1.7 dB. Potentially, this design has lower material refractive index contrast, larger minimum etching size, smaller lengths, and less stray light crosstalk, which is beneficial for systems applications such as gyroscopes.https://ieeexplore.ieee.org/document/10473059/On-chip polarizerradiation couplingless stray light crosstalk |
| spellingShingle | Li Zhang Shengjie Tang Cheng Chen Haibin Lv Xiaoping Liu Demonstration of an On-Chip TE-Pass Polarizer Based on Radiation Coupling IEEE Photonics Journal On-chip polarizer radiation coupling less stray light crosstalk |
| title | Demonstration of an On-Chip TE-Pass Polarizer Based on Radiation Coupling |
| title_full | Demonstration of an On-Chip TE-Pass Polarizer Based on Radiation Coupling |
| title_fullStr | Demonstration of an On-Chip TE-Pass Polarizer Based on Radiation Coupling |
| title_full_unstemmed | Demonstration of an On-Chip TE-Pass Polarizer Based on Radiation Coupling |
| title_short | Demonstration of an On-Chip TE-Pass Polarizer Based on Radiation Coupling |
| title_sort | demonstration of an on chip te pass polarizer based on radiation coupling |
| topic | On-chip polarizer radiation coupling less stray light crosstalk |
| url | https://ieeexplore.ieee.org/document/10473059/ |
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