Monolithic 3D Logic Gates Based on p‐Te and n‐Bi2S3 Complementary Thin‐Film Transistors
Abstract As Moore's law approaches its limit, achieving higher device density necessitates innovative architectures, with monolithic three‐dimensional (M3D) designs emerging as a promising solution. Although numerous top‐down fabrication methods have yielded encouraging results, they often fall...
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| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-06-01
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| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400786 |
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