Monolithic 3D Logic Gates Based on p‐Te and n‐Bi2S3 Complementary Thin‐Film Transistors
Abstract As Moore's law approaches its limit, achieving higher device density necessitates innovative architectures, with monolithic three‐dimensional (M3D) designs emerging as a promising solution. Although numerous top‐down fabrication methods have yielded encouraging results, they often fall...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-06-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400786 |
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| author | Yuqia Ran Yiwen Song Long Li Xujin Song Pingfan Gu Qi Wang Haifeng Du Jinfeng Kang Yu Ye |
| author_facet | Yuqia Ran Yiwen Song Long Li Xujin Song Pingfan Gu Qi Wang Haifeng Du Jinfeng Kang Yu Ye |
| author_sort | Yuqia Ran |
| collection | DOAJ |
| description | Abstract As Moore's law approaches its limit, achieving higher device density necessitates innovative architectures, with monolithic three‐dimensional (M3D) designs emerging as a promising solution. Although numerous top‐down fabrication methods have yielded encouraging results, they often fall short of meeting the demands for large‐scale production, ultimately hindering the development of more complex, high‐performance devices. Here, a novel approach employing all thermally evaporated thin films is presented for the bottom‐up fabrication of M3D integrated logic circuits. Utilizing p‐type tellurium (Te) and n‐type bismuth sulfide (Bi2S3) as channel materials, monolithicly stacked prototypes of inverter, NAND, NOR, AND gates, SRAM, and oscillators are successfully demonstrated. This work highlights the viability of utilizing bottom‐up synthesized thin‐film transistors (TFTs) to construct sophisticated M3D logic circuits, underscoring the significance of deposition techniques such as thermal evaporation as a highly effective approach. |
| format | Article |
| id | doaj-art-0ff030fb6eb24e77b78b3ba4a3ee427c |
| institution | OA Journals |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-06-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-0ff030fb6eb24e77b78b3ba4a3ee427c2025-08-20T02:05:23ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-06-01118n/an/a10.1002/aelm.202400786Monolithic 3D Logic Gates Based on p‐Te and n‐Bi2S3 Complementary Thin‐Film TransistorsYuqia Ran0Yiwen Song1Long Li2Xujin Song3Pingfan Gu4Qi Wang5Haifeng Du6Jinfeng Kang7Yu Ye8State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano‐Optoelectronics School of Physics Peking University Beijing 100871 ChinaState Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano‐Optoelectronics School of Physics Peking University Beijing 100871 ChinaAnhui Province Key Laboratory of Low‐Energy Quantum Materials and Devices High Magnetic Field Laboratory HFIPS Chinese Academy of Sciences Hefei Anhui 230031 ChinaSchool of Integrated Circuits Peking University Beijing 100871 ChinaState Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano‐Optoelectronics School of Physics Peking University Beijing 100871 ChinaState Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano‐Optoelectronics School of Physics Peking University Beijing 100871 ChinaAnhui Province Key Laboratory of Low‐Energy Quantum Materials and Devices High Magnetic Field Laboratory HFIPS Chinese Academy of Sciences Hefei Anhui 230031 ChinaSchool of Integrated Circuits Peking University Beijing 100871 ChinaState Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano‐Optoelectronics School of Physics Peking University Beijing 100871 ChinaAbstract As Moore's law approaches its limit, achieving higher device density necessitates innovative architectures, with monolithic three‐dimensional (M3D) designs emerging as a promising solution. Although numerous top‐down fabrication methods have yielded encouraging results, they often fall short of meeting the demands for large‐scale production, ultimately hindering the development of more complex, high‐performance devices. Here, a novel approach employing all thermally evaporated thin films is presented for the bottom‐up fabrication of M3D integrated logic circuits. Utilizing p‐type tellurium (Te) and n‐type bismuth sulfide (Bi2S3) as channel materials, monolithicly stacked prototypes of inverter, NAND, NOR, AND gates, SRAM, and oscillators are successfully demonstrated. This work highlights the viability of utilizing bottom‐up synthesized thin‐film transistors (TFTs) to construct sophisticated M3D logic circuits, underscoring the significance of deposition techniques such as thermal evaporation as a highly effective approach.https://doi.org/10.1002/aelm.202400786Bi2S3logic gatesM3D integrationTeTFTs |
| spellingShingle | Yuqia Ran Yiwen Song Long Li Xujin Song Pingfan Gu Qi Wang Haifeng Du Jinfeng Kang Yu Ye Monolithic 3D Logic Gates Based on p‐Te and n‐Bi2S3 Complementary Thin‐Film Transistors Advanced Electronic Materials Bi2S3 logic gates M3D integration Te TFTs |
| title | Monolithic 3D Logic Gates Based on p‐Te and n‐Bi2S3 Complementary Thin‐Film Transistors |
| title_full | Monolithic 3D Logic Gates Based on p‐Te and n‐Bi2S3 Complementary Thin‐Film Transistors |
| title_fullStr | Monolithic 3D Logic Gates Based on p‐Te and n‐Bi2S3 Complementary Thin‐Film Transistors |
| title_full_unstemmed | Monolithic 3D Logic Gates Based on p‐Te and n‐Bi2S3 Complementary Thin‐Film Transistors |
| title_short | Monolithic 3D Logic Gates Based on p‐Te and n‐Bi2S3 Complementary Thin‐Film Transistors |
| title_sort | monolithic 3d logic gates based on p te and n bi2s3 complementary thin film transistors |
| topic | Bi2S3 logic gates M3D integration Te TFTs |
| url | https://doi.org/10.1002/aelm.202400786 |
| work_keys_str_mv | AT yuqiaran monolithic3dlogicgatesbasedonpteandnbi2s3complementarythinfilmtransistors AT yiwensong monolithic3dlogicgatesbasedonpteandnbi2s3complementarythinfilmtransistors AT longli monolithic3dlogicgatesbasedonpteandnbi2s3complementarythinfilmtransistors AT xujinsong monolithic3dlogicgatesbasedonpteandnbi2s3complementarythinfilmtransistors AT pingfangu monolithic3dlogicgatesbasedonpteandnbi2s3complementarythinfilmtransistors AT qiwang monolithic3dlogicgatesbasedonpteandnbi2s3complementarythinfilmtransistors AT haifengdu monolithic3dlogicgatesbasedonpteandnbi2s3complementarythinfilmtransistors AT jinfengkang monolithic3dlogicgatesbasedonpteandnbi2s3complementarythinfilmtransistors AT yuye monolithic3dlogicgatesbasedonpteandnbi2s3complementarythinfilmtransistors |