A high‐capacity and nonvolatile spintronic associative memory hardware accelerator
Abstract Significant progress has been made in manufacturing emerging technologies in recent years. This progress implemented in‐memory‐computing and neural networks, one of today's hottest research topics. Over time, the need to process complex tasks has increased. This need causes the emergen...
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| Format: | Article |
| Language: | English |
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Wiley
2023-07-01
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| Series: | IET Circuits, Devices and Systems |
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| Online Access: | https://doi.org/10.1049/cds2.12160 |
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| author | Mahan Rezaei Abdolah Amirany Mohammad Hossein Moaiyeri Kian Jafari |
| author_facet | Mahan Rezaei Abdolah Amirany Mohammad Hossein Moaiyeri Kian Jafari |
| author_sort | Mahan Rezaei |
| collection | DOAJ |
| description | Abstract Significant progress has been made in manufacturing emerging technologies in recent years. This progress implemented in‐memory‐computing and neural networks, one of today's hottest research topics. Over time, the need to process complex tasks has increased. This need causes the emergence of intelligent processors. A nonvolatile associative memory based on spintronic synapses utilising magnetic tunnel junction (MTJ) and carbon nanotube field‐effect transistors (CNTFET)‐based neurons is proposed. The proposed design uses the MTJ device because of its fascinating features, such as reliable reconfiguration and nonvolatility. At the same time, CNTFET has overcome conventional complementary metal‐oxide‐semiconductor shortcomings like the short channel effect, drain‐induced barrier lowering, and poor hole mobility. The proposed design is simulated in the presence of process variations. The proposed design aims to increase the number of weights generated in the synapse for higher memory capacity and accuracy. The effect of different tunnel magnetoresistance (TMR) values (100%, 200%, and 300%) on the performance and accuracy of the proposed design has also been investigated. This investigation shows that the proposed design performs well even with a low TMR value, which is very important and remarkable from the fabrication point of view. |
| format | Article |
| id | doaj-art-0fd886c7a18a492481ad9b6728fada55 |
| institution | Kabale University |
| issn | 1751-858X 1751-8598 |
| language | English |
| publishDate | 2023-07-01 |
| publisher | Wiley |
| record_format | Article |
| series | IET Circuits, Devices and Systems |
| spelling | doaj-art-0fd886c7a18a492481ad9b6728fada552025-02-03T06:45:05ZengWileyIET Circuits, Devices and Systems1751-858X1751-85982023-07-0117420521210.1049/cds2.12160A high‐capacity and nonvolatile spintronic associative memory hardware acceleratorMahan Rezaei0Abdolah Amirany1Mohammad Hossein Moaiyeri2Kian Jafari3Faculty of Electrical Engineering Shahid Beheshti University Tehran IranFaculty of Electrical Engineering Shahid Beheshti University Tehran IranFaculty of Electrical Engineering Shahid Beheshti University Tehran IranFaculty of Electrical Engineering Shahid Beheshti University Tehran IranAbstract Significant progress has been made in manufacturing emerging technologies in recent years. This progress implemented in‐memory‐computing and neural networks, one of today's hottest research topics. Over time, the need to process complex tasks has increased. This need causes the emergence of intelligent processors. A nonvolatile associative memory based on spintronic synapses utilising magnetic tunnel junction (MTJ) and carbon nanotube field‐effect transistors (CNTFET)‐based neurons is proposed. The proposed design uses the MTJ device because of its fascinating features, such as reliable reconfiguration and nonvolatility. At the same time, CNTFET has overcome conventional complementary metal‐oxide‐semiconductor shortcomings like the short channel effect, drain‐induced barrier lowering, and poor hole mobility. The proposed design is simulated in the presence of process variations. The proposed design aims to increase the number of weights generated in the synapse for higher memory capacity and accuracy. The effect of different tunnel magnetoresistance (TMR) values (100%, 200%, and 300%) on the performance and accuracy of the proposed design has also been investigated. This investigation shows that the proposed design performs well even with a low TMR value, which is very important and remarkable from the fabrication point of view.https://doi.org/10.1049/cds2.12160carbon nanotube field effect transistorsmagnetic tunnellingmemory architectureneural chipstunnelling magnetoresistance |
| spellingShingle | Mahan Rezaei Abdolah Amirany Mohammad Hossein Moaiyeri Kian Jafari A high‐capacity and nonvolatile spintronic associative memory hardware accelerator IET Circuits, Devices and Systems carbon nanotube field effect transistors magnetic tunnelling memory architecture neural chips tunnelling magnetoresistance |
| title | A high‐capacity and nonvolatile spintronic associative memory hardware accelerator |
| title_full | A high‐capacity and nonvolatile spintronic associative memory hardware accelerator |
| title_fullStr | A high‐capacity and nonvolatile spintronic associative memory hardware accelerator |
| title_full_unstemmed | A high‐capacity and nonvolatile spintronic associative memory hardware accelerator |
| title_short | A high‐capacity and nonvolatile spintronic associative memory hardware accelerator |
| title_sort | high capacity and nonvolatile spintronic associative memory hardware accelerator |
| topic | carbon nanotube field effect transistors magnetic tunnelling memory architecture neural chips tunnelling magnetoresistance |
| url | https://doi.org/10.1049/cds2.12160 |
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