InGaN multiquantum wells—problem of carrier injection

InGaN multiquantum wells—problem of carrier injection

Abstract This study addresses the issue of effective carrier injection to quantum wells in laser diode structures. The nitride light emitting structures used in this study were fabricated by Metal-Organic Vapor Phase Epitaxy (MOVPE). We developed three distinct sets of samples, with varying quantum...

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Bibliographic Details
Main Authors: Agata Bojarska-Cieślińska, Łucja Marona, Szymon Grzanka, Ewa Grzanka, Piotr Perlin
Format: Article
Language:English
Published: Nature Portfolio 2025-01-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-025-86774-6
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