Conductivity Enhancement of PVD-WS<sub>2</sub> Films Using Cl<sub>2</sub>-Plasma Treatment Followed by Sulfur-Vapor Annealing
The conductivity of tungsten disulfide (WS2) films using sputtering, which is a physical vapor deposition (PVD), was enhanced using a chlorine (Cl2)-plasma treatment and sulfur-vapor annealing (SVA). For WS2 films to be used in thermoelectric devices, its carrier concentration must be controlled. Th...
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IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10475166/ |
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| author | Keita Kurohara Shinya Imai Takuya Hamada Tetsuya Tatsumi Shigetaka Tomiya Kuniyuki Kakushima Kazuo Tsutsui Hitoshi Wakabayashi |
| author_facet | Keita Kurohara Shinya Imai Takuya Hamada Tetsuya Tatsumi Shigetaka Tomiya Kuniyuki Kakushima Kazuo Tsutsui Hitoshi Wakabayashi |
| author_sort | Keita Kurohara |
| collection | DOAJ |
| description | The conductivity of tungsten disulfide (WS2) films using sputtering, which is a physical vapor deposition (PVD), was enhanced using a chlorine (Cl2)-plasma treatment and sulfur-vapor annealing (SVA). For WS2 films to be used in thermoelectric devices, its carrier concentration must be controlled. Therefore, we exposed WS2 films to Cl2-plasma as a doping method. In addition, SVA was performed to improve the crystallinity of the film and potentially introduce activating dopants. Consequently, the conductivity of the Cl2-plasma-treated PVD-WS2 films (0.440 S/m) more than doubled compared with that of an untreated PVD-WS2 film (0.201 S/m). The doping type in this experiment is considered to be n-type on the basis of a positive peak shift observed in the X-ray photoelectron spectra. |
| format | Article |
| id | doaj-art-0f0027c3231c43f5b9517a4346560028 |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-0f0027c3231c43f5b9517a43465600282025-01-29T00:00:16ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-011239039810.1109/JEDS.2024.337874510475166Conductivity Enhancement of PVD-WS<sub>2</sub> Films Using Cl<sub>2</sub>-Plasma Treatment Followed by Sulfur-Vapor AnnealingKeita Kurohara0https://orcid.org/0009-0002-3182-7652Shinya Imai1https://orcid.org/0000-0002-1993-9910Takuya Hamada2https://orcid.org/0000-0003-3648-7677Tetsuya Tatsumi3Shigetaka Tomiya4https://orcid.org/0000-0003-0377-9331Kuniyuki Kakushima5Kazuo Tsutsui6https://orcid.org/0000-0002-5472-5539Hitoshi Wakabayashi7https://orcid.org/0000-0001-5509-521XInstitute of Innovative Research, Tokyo Institute of Technology, Yokohama, JapanInstitute of Innovative Research, Tokyo Institute of Technology, Yokohama, JapanInstitute of Innovative Research, Tokyo Institute of Technology, Yokohama, JapanInstitute of Innovative Research, Tokyo Institute of Technology, Yokohama, JapanInstitute of Innovative Research, Tokyo Institute of Technology, Yokohama, JapanInstitute of Innovative Research, Tokyo Institute of Technology, Yokohama, JapanInstitute of Innovative Research, Tokyo Institute of Technology, Yokohama, JapanInstitute of Innovative Research, Tokyo Institute of Technology, Yokohama, JapanThe conductivity of tungsten disulfide (WS2) films using sputtering, which is a physical vapor deposition (PVD), was enhanced using a chlorine (Cl2)-plasma treatment and sulfur-vapor annealing (SVA). For WS2 films to be used in thermoelectric devices, its carrier concentration must be controlled. Therefore, we exposed WS2 films to Cl2-plasma as a doping method. In addition, SVA was performed to improve the crystallinity of the film and potentially introduce activating dopants. Consequently, the conductivity of the Cl2-plasma-treated PVD-WS2 films (0.440 S/m) more than doubled compared with that of an untreated PVD-WS2 film (0.201 S/m). The doping type in this experiment is considered to be n-type on the basis of a positive peak shift observed in the X-ray photoelectron spectra.https://ieeexplore.ieee.org/document/10475166/Transition-metal di-chalcogenide (TMDC)tungsten disulfide (WS2)ultra-high-vacuum (UHV) radio-frequency (RF) magnetron sputteringchlorine (Cl2) plasma treatmentsulfur-vapor annealing (SVA) |
| spellingShingle | Keita Kurohara Shinya Imai Takuya Hamada Tetsuya Tatsumi Shigetaka Tomiya Kuniyuki Kakushima Kazuo Tsutsui Hitoshi Wakabayashi Conductivity Enhancement of PVD-WS<sub>2</sub> Films Using Cl<sub>2</sub>-Plasma Treatment Followed by Sulfur-Vapor Annealing IEEE Journal of the Electron Devices Society Transition-metal di-chalcogenide (TMDC) tungsten disulfide (WS2) ultra-high-vacuum (UHV) radio-frequency (RF) magnetron sputtering chlorine (Cl2) plasma treatment sulfur-vapor annealing (SVA) |
| title | Conductivity Enhancement of PVD-WS<sub>2</sub> Films Using Cl<sub>2</sub>-Plasma Treatment Followed by Sulfur-Vapor Annealing |
| title_full | Conductivity Enhancement of PVD-WS<sub>2</sub> Films Using Cl<sub>2</sub>-Plasma Treatment Followed by Sulfur-Vapor Annealing |
| title_fullStr | Conductivity Enhancement of PVD-WS<sub>2</sub> Films Using Cl<sub>2</sub>-Plasma Treatment Followed by Sulfur-Vapor Annealing |
| title_full_unstemmed | Conductivity Enhancement of PVD-WS<sub>2</sub> Films Using Cl<sub>2</sub>-Plasma Treatment Followed by Sulfur-Vapor Annealing |
| title_short | Conductivity Enhancement of PVD-WS<sub>2</sub> Films Using Cl<sub>2</sub>-Plasma Treatment Followed by Sulfur-Vapor Annealing |
| title_sort | conductivity enhancement of pvd ws sub 2 sub films using cl sub 2 sub plasma treatment followed by sulfur vapor annealing |
| topic | Transition-metal di-chalcogenide (TMDC) tungsten disulfide (WS2) ultra-high-vacuum (UHV) radio-frequency (RF) magnetron sputtering chlorine (Cl2) plasma treatment sulfur-vapor annealing (SVA) |
| url | https://ieeexplore.ieee.org/document/10475166/ |
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