Conductivity Enhancement of PVD-WS<sub>2</sub> Films Using Cl<sub>2</sub>-Plasma Treatment Followed by Sulfur-Vapor Annealing
The conductivity of tungsten disulfide (WS2) films using sputtering, which is a physical vapor deposition (PVD), was enhanced using a chlorine (Cl2)-plasma treatment and sulfur-vapor annealing (SVA). For WS2 films to be used in thermoelectric devices, its carrier concentration must be controlled. Th...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10475166/ |
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| Summary: | The conductivity of tungsten disulfide (WS2) films using sputtering, which is a physical vapor deposition (PVD), was enhanced using a chlorine (Cl2)-plasma treatment and sulfur-vapor annealing (SVA). For WS2 films to be used in thermoelectric devices, its carrier concentration must be controlled. Therefore, we exposed WS2 films to Cl2-plasma as a doping method. In addition, SVA was performed to improve the crystallinity of the film and potentially introduce activating dopants. Consequently, the conductivity of the Cl2-plasma-treated PVD-WS2 films (0.440 S/m) more than doubled compared with that of an untreated PVD-WS2 film (0.201 S/m). The doping type in this experiment is considered to be n-type on the basis of a positive peak shift observed in the X-ray photoelectron spectra. |
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| ISSN: | 2168-6734 |