APA (7th ed.) Citation

Lee, Y., Chang, C., Le, B., Nguyen, V. T., Tien, T., & Lin, H. Effects of Deposition Power and Annealing Temperature on Indium Zinc Oxide (IZO) Film’s Properties and Their Applications to the Source–Drain Electrodes of Amorphous Indium Gallium Zinc Oxide (a-IGZO) Thin-Film Transistors (TFTs). MDPI AG.

Chicago Style (17th ed.) Citation

Lee, Yih-Shing, Chih-Hsiang Chang, Bing-Shin Le, Vo-Truong Thao Nguyen, Tsung-Cheng Tien, and Horng-Chih Lin. Effects of Deposition Power and Annealing Temperature on Indium Zinc Oxide (IZO) Film’s Properties and Their Applications to the Source–Drain Electrodes of Amorphous Indium Gallium Zinc Oxide (a-IGZO) Thin-Film Transistors (TFTs). MDPI AG.

MLA (9th ed.) Citation

Lee, Yih-Shing, et al. Effects of Deposition Power and Annealing Temperature on Indium Zinc Oxide (IZO) Film’s Properties and Their Applications to the Source–Drain Electrodes of Amorphous Indium Gallium Zinc Oxide (a-IGZO) Thin-Film Transistors (TFTs). MDPI AG.