Wet Anisotropic Etching Characteristics of Si{111} in KOH-Based Solution
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Chemical Society
2025-01-01
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| Series: | ACS Omega |
| Online Access: | https://doi.org/10.1021/acsomega.4c09272 |
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| _version_ | 1832583633960960000 |
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| author | Xiezheng Yu Yinghua Ye Peng Zhu Lizhi Wu Ruiqi Shen Chen-guang Zhu |
| author_facet | Xiezheng Yu Yinghua Ye Peng Zhu Lizhi Wu Ruiqi Shen Chen-guang Zhu |
| author_sort | Xiezheng Yu |
| collection | DOAJ |
| format | Article |
| id | doaj-art-0ea6ff8f09db427baba958e289431761 |
| institution | Kabale University |
| issn | 2470-1343 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | American Chemical Society |
| record_format | Article |
| series | ACS Omega |
| spelling | doaj-art-0ea6ff8f09db427baba958e2894317612025-01-28T08:57:41ZengAmerican Chemical SocietyACS Omega2470-13432025-01-011032940294810.1021/acsomega.4c09272Wet Anisotropic Etching Characteristics of Si{111} in KOH-Based SolutionXiezheng Yu0Yinghua Ye1Peng Zhu2Lizhi Wu3Ruiqi Shen4Chen-guang Zhu5School of Chemistry and Chemical Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu, ChinaSchool of Chemistry and Chemical Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu, ChinaSchool of Chemistry and Chemical Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu, ChinaSchool of Chemistry and Chemical Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu, ChinaSchool of Chemistry and Chemical Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu, ChinaSchool of Chemistry and Chemical Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu, Chinahttps://doi.org/10.1021/acsomega.4c09272 |
| spellingShingle | Xiezheng Yu Yinghua Ye Peng Zhu Lizhi Wu Ruiqi Shen Chen-guang Zhu Wet Anisotropic Etching Characteristics of Si{111} in KOH-Based Solution ACS Omega |
| title | Wet Anisotropic Etching Characteristics of Si{111} in KOH-Based Solution |
| title_full | Wet Anisotropic Etching Characteristics of Si{111} in KOH-Based Solution |
| title_fullStr | Wet Anisotropic Etching Characteristics of Si{111} in KOH-Based Solution |
| title_full_unstemmed | Wet Anisotropic Etching Characteristics of Si{111} in KOH-Based Solution |
| title_short | Wet Anisotropic Etching Characteristics of Si{111} in KOH-Based Solution |
| title_sort | wet anisotropic etching characteristics of si 111 in koh based solution |
| url | https://doi.org/10.1021/acsomega.4c09272 |
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