Elastic Properties and the Band Gap of AlNxP1-x Semiconductor Alloy: A Comparative Study of Various Ab Initio Approaches
Structural and elastic properties of AlNxP1-x, a novel semiconductor alloy, are studied from the first principles in both zinc-blende and wurtzite structures. Performances of the finite difference (FD) method and the density functional perturbation theory (DFPT) are tested and compared. Both of thes...
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| Format: | Article |
| Language: | English |
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Wiley
2016-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2016/1429023 |
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| author | M. P. Polak M. J. Winiarski K. Wittek P. Scharoch |
| author_facet | M. P. Polak M. J. Winiarski K. Wittek P. Scharoch |
| author_sort | M. P. Polak |
| collection | DOAJ |
| description | Structural and elastic properties of AlNxP1-x, a novel semiconductor alloy, are studied from the first principles in both zinc-blende and wurtzite structures. Performances of the finite difference (FD) method and the density functional perturbation theory (DFPT) are tested and compared. Both of these methods are applied to two different approaches of alloy simulation, a supercell of 16 and 32 atoms (for zinc-blende and wurtzite structures, resp.) and the alchemical mixing (AM) method, where the pseudopotentials are mixed in an appropriate way to form an alloy. All elastic properties, including the elastic tensors, elastic moduli, Poisson’s ratio, B/G, and relaxation coefficient, as well as lattice parameters are calculated using all said methods. Conclusions about the use of the approaches investigated in this paper and about their performance are drawn. In addition, in both crystal structures, the band gap is studied in the whole composition range using the MBJLDA functional. The band gap bowings are unusually high, which confirms earlier reports. |
| format | Article |
| id | doaj-art-0de5863127d7496a8a3cc661daa2ea6f |
| institution | Kabale University |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2016-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-0de5863127d7496a8a3cc661daa2ea6f2025-02-03T05:57:10ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422016-01-01201610.1155/2016/14290231429023Elastic Properties and the Band Gap of AlNxP1-x Semiconductor Alloy: A Comparative Study of Various Ab Initio ApproachesM. P. Polak0M. J. Winiarski1K. Wittek2P. Scharoch3Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wybrzeże Wyspianskiego 27, 50-370 Wroclaw, PolandInstitute of Low Temperature and Structure Research, Polish Academy of Sciences, Okólna 2, 50-422 Wroclaw, PolandFaculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wybrzeże Wyspianskiego 27, 50-370 Wroclaw, PolandFaculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wybrzeże Wyspianskiego 27, 50-370 Wroclaw, PolandStructural and elastic properties of AlNxP1-x, a novel semiconductor alloy, are studied from the first principles in both zinc-blende and wurtzite structures. Performances of the finite difference (FD) method and the density functional perturbation theory (DFPT) are tested and compared. Both of these methods are applied to two different approaches of alloy simulation, a supercell of 16 and 32 atoms (for zinc-blende and wurtzite structures, resp.) and the alchemical mixing (AM) method, where the pseudopotentials are mixed in an appropriate way to form an alloy. All elastic properties, including the elastic tensors, elastic moduli, Poisson’s ratio, B/G, and relaxation coefficient, as well as lattice parameters are calculated using all said methods. Conclusions about the use of the approaches investigated in this paper and about their performance are drawn. In addition, in both crystal structures, the band gap is studied in the whole composition range using the MBJLDA functional. The band gap bowings are unusually high, which confirms earlier reports.http://dx.doi.org/10.1155/2016/1429023 |
| spellingShingle | M. P. Polak M. J. Winiarski K. Wittek P. Scharoch Elastic Properties and the Band Gap of AlNxP1-x Semiconductor Alloy: A Comparative Study of Various Ab Initio Approaches Advances in Materials Science and Engineering |
| title | Elastic Properties and the Band Gap of AlNxP1-x Semiconductor Alloy: A Comparative Study of Various Ab Initio Approaches |
| title_full | Elastic Properties and the Band Gap of AlNxP1-x Semiconductor Alloy: A Comparative Study of Various Ab Initio Approaches |
| title_fullStr | Elastic Properties and the Band Gap of AlNxP1-x Semiconductor Alloy: A Comparative Study of Various Ab Initio Approaches |
| title_full_unstemmed | Elastic Properties and the Band Gap of AlNxP1-x Semiconductor Alloy: A Comparative Study of Various Ab Initio Approaches |
| title_short | Elastic Properties and the Band Gap of AlNxP1-x Semiconductor Alloy: A Comparative Study of Various Ab Initio Approaches |
| title_sort | elastic properties and the band gap of alnxp1 x semiconductor alloy a comparative study of various ab initio approaches |
| url | http://dx.doi.org/10.1155/2016/1429023 |
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