Effect of p-InGaN Cap Layer on Low-Resistance Contact to p-GaN: Carrier Transport Mechanism and Barrier Height Characteristics

Effect of p-InGaN Cap Layer on Low-Resistance Contact to p-GaN: Carrier Transport Mechanism and Barrier Height Characteristics

This study investigated the low contact resistivity and Schottky barrier characteristics in p-GaN by modifying the thickness and doping levels of a p-InGaN cap layer. A comparative analysis with highly doped p-InGaN revealed the key mechanisms contributing to low-resistance contacts. Atomic force mi...

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Bibliographic Details
Main Authors: Mohit Kumar, Laurent Xu, Timothée Labau, Jérôme Biscarrat, Simona Torrengo, Matthew Charles, Christophe Lecouvey, Aurélien Olivier, Joelle Zgheib, René Escoffier, Julien Buckley
Format: Article
Language:English
Published: MDPI AG 2025-01-01
Series:Crystals
Subjects:
p<sup>++</sup>-InGaN
contact resistivity
Schottky barrier height
polarization effects
carrier transport mechanism
GaN-based heterostructures
Online Access:https://www.mdpi.com/2073-4352/15/1/56
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