Molecular beam epitaxy, photocatalytic solar water splitting, and carrier dynamics of InGaN micro-network deep-nano structures
GaN-based nanostructures are increasingly being used for a broad range of electronic as well as optoelectronic device applications, and more recently artificial photosynthesis and solar fuel generation. We have performed a detailed investigation of the molecular beam epitaxy and characterization of...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2025-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0212409 |
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| author | Ishtiaque Ahmed Navid Yifan Shen Peng Zhou Jonathan Schwartz Yin Min Goh Tao Ma Robert Hovden Theodore Norris Zetian Mi |
| author_facet | Ishtiaque Ahmed Navid Yifan Shen Peng Zhou Jonathan Schwartz Yin Min Goh Tao Ma Robert Hovden Theodore Norris Zetian Mi |
| author_sort | Ishtiaque Ahmed Navid |
| collection | DOAJ |
| description | GaN-based nanostructures are increasingly being used for a broad range of electronic as well as optoelectronic device applications, and more recently artificial photosynthesis and solar fuel generation. We have performed a detailed investigation of the molecular beam epitaxy and characterization of Mg-doped p-type InGaN micro-network nanostructures with lateral dimensions reaching as small as a few nanometers. Mg doping shows a clear impact on the carrier dynamics and photocatalytic performance of such micro-network nanostructures. The p-type InGaN micro-network nanostructures exhibit remarkable photocatalytic activities for solar water splitting and hydrogen fuel generation. With an optimum level of Mg doping, we demonstrate a solar-to-hydrogen (STH) conversion efficiency of ∼2.6% in the photocatalytic water splitting process under concentrated sunlight at ∼50 °C temperature. The impact of Mg doping variation on the STH conversion efficiency and carrier dynamics has been investigated in detail. This study provides new directions for developing the next generation of high-efficiency photocatalytic nanostructure devices and systems. |
| format | Article |
| id | doaj-art-0bf7e55625594926a305b552cb416e8c |
| institution | Kabale University |
| issn | 2158-3226 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj-art-0bf7e55625594926a305b552cb416e8c2025-02-03T16:40:42ZengAIP Publishing LLCAIP Advances2158-32262025-01-01151015024015024-910.1063/5.0212409Molecular beam epitaxy, photocatalytic solar water splitting, and carrier dynamics of InGaN micro-network deep-nano structuresIshtiaque Ahmed Navid0Yifan Shen1Peng Zhou2Jonathan Schwartz3Yin Min Goh4Tao Ma5Robert Hovden6Theodore Norris7Zetian Mi8Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109, USADepartment of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109, USADepartment of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109, USADepartment of Materials Science and Engineering, University of Michigan, 2300 Hayward St., Ann Arbor, Michigan 48109, USADepartment of Physics, University of Michigan, 450 Church St., Ann Arbor, Michigan 48109, USADepartment of Materials Science and Engineering, University of Michigan, 2300 Hayward St., Ann Arbor, Michigan 48109, USADepartment of Materials Science and Engineering, University of Michigan, 2300 Hayward St., Ann Arbor, Michigan 48109, USADepartment of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109, USADepartment of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109, USAGaN-based nanostructures are increasingly being used for a broad range of electronic as well as optoelectronic device applications, and more recently artificial photosynthesis and solar fuel generation. We have performed a detailed investigation of the molecular beam epitaxy and characterization of Mg-doped p-type InGaN micro-network nanostructures with lateral dimensions reaching as small as a few nanometers. Mg doping shows a clear impact on the carrier dynamics and photocatalytic performance of such micro-network nanostructures. The p-type InGaN micro-network nanostructures exhibit remarkable photocatalytic activities for solar water splitting and hydrogen fuel generation. With an optimum level of Mg doping, we demonstrate a solar-to-hydrogen (STH) conversion efficiency of ∼2.6% in the photocatalytic water splitting process under concentrated sunlight at ∼50 °C temperature. The impact of Mg doping variation on the STH conversion efficiency and carrier dynamics has been investigated in detail. This study provides new directions for developing the next generation of high-efficiency photocatalytic nanostructure devices and systems.http://dx.doi.org/10.1063/5.0212409 |
| spellingShingle | Ishtiaque Ahmed Navid Yifan Shen Peng Zhou Jonathan Schwartz Yin Min Goh Tao Ma Robert Hovden Theodore Norris Zetian Mi Molecular beam epitaxy, photocatalytic solar water splitting, and carrier dynamics of InGaN micro-network deep-nano structures AIP Advances |
| title | Molecular beam epitaxy, photocatalytic solar water splitting, and carrier dynamics of InGaN micro-network deep-nano structures |
| title_full | Molecular beam epitaxy, photocatalytic solar water splitting, and carrier dynamics of InGaN micro-network deep-nano structures |
| title_fullStr | Molecular beam epitaxy, photocatalytic solar water splitting, and carrier dynamics of InGaN micro-network deep-nano structures |
| title_full_unstemmed | Molecular beam epitaxy, photocatalytic solar water splitting, and carrier dynamics of InGaN micro-network deep-nano structures |
| title_short | Molecular beam epitaxy, photocatalytic solar water splitting, and carrier dynamics of InGaN micro-network deep-nano structures |
| title_sort | molecular beam epitaxy photocatalytic solar water splitting and carrier dynamics of ingan micro network deep nano structures |
| url | http://dx.doi.org/10.1063/5.0212409 |
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