Reliable Multistate RRAM Devices for Reconfigurable CAM and IMC Applications
This work presents a reliable multistate RRAM device based on a Cu/Ta2O5/WO<inline-formula> <tex-math notation="LaTeX">${}_{\text {3-x}}$ </tex-math></inline-formula>/Pt structure, utilizing fully CMOS-compatible materials. The device demonstrates four distinct resi...
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| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10969850/ |
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