Discrete-Trap Effects on 3-D NAND Variability – Part II: Random Telegraph Noise
In Part II of this article we discuss the impact of a discrete treatment of traps on 3-D NAND Flash random telegraph noise (RTN). A higher RTN results when discrete traps are taken into account, that can only be explained by a stronger influence of the discrete charged traps on the current conductio...
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IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10643403/ |
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| author | Gerardo Malavena Salvatore M. Amoroso Andrew R. Brown Plamen Asenov Xi-Wei Lin Victor Moroz Mattia Giulianini David Refaldi Christian Monzio Compagnoni Alessandro S. Spinelli |
| author_facet | Gerardo Malavena Salvatore M. Amoroso Andrew R. Brown Plamen Asenov Xi-Wei Lin Victor Moroz Mattia Giulianini David Refaldi Christian Monzio Compagnoni Alessandro S. Spinelli |
| author_sort | Gerardo Malavena |
| collection | DOAJ |
| description | In Part II of this article we discuss the impact of a discrete treatment of traps on 3-D NAND Flash random telegraph noise (RTN). A higher RTN results when discrete traps are taken into account, that can only be explained by a stronger influence of the discrete charged traps on the current conduction, leading to more percolation. The effects are then investigated as a function of the cell parameters, showing that a continuous model for traps cannot reproduce the correct dependence. |
| format | Article |
| id | doaj-art-09c859b81e254e71b8dbdeb8f936cf18 |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-09c859b81e254e71b8dbdeb8f936cf182025-01-29T00:00:14ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-011265866110.1109/JEDS.2024.344715010643403Discrete-Trap Effects on 3-D NAND Variability – Part II: Random Telegraph NoiseGerardo Malavena0https://orcid.org/0000-0002-5756-8989Salvatore M. Amoroso1https://orcid.org/0000-0001-6642-0196Andrew R. Brown2https://orcid.org/0000-0003-4471-7129Plamen Asenov3Xi-Wei Lin4https://orcid.org/0000-0003-0098-0638Victor Moroz5Mattia Giulianini6David Refaldi7https://orcid.org/0009-0003-0836-1820Christian Monzio Compagnoni8https://orcid.org/0000-0001-9820-6709Alessandro S. Spinelli9https://orcid.org/0000-0002-3290-6734Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Milan, ItalySynopsys Inc., Mountain View, CA, USASynopsys Inc., Mountain View, CA, USASynopsys Inc., Mountain View, CA, USASynopsys Inc., Mountain View, CA, USASynopsys Inc., Mountain View, CA, USADipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Milan, ItalyDipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Milan, ItalyDipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Milan, ItalyDipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Milan, ItalyIn Part II of this article we discuss the impact of a discrete treatment of traps on 3-D NAND Flash random telegraph noise (RTN). A higher RTN results when discrete traps are taken into account, that can only be explained by a stronger influence of the discrete charged traps on the current conduction, leading to more percolation. The effects are then investigated as a function of the cell parameters, showing that a continuous model for traps cannot reproduce the correct dependence.https://ieeexplore.ieee.org/document/10643403/3-DNAND Flash memoriesvariabilityrandom telegraph noisediscrete traps |
| spellingShingle | Gerardo Malavena Salvatore M. Amoroso Andrew R. Brown Plamen Asenov Xi-Wei Lin Victor Moroz Mattia Giulianini David Refaldi Christian Monzio Compagnoni Alessandro S. Spinelli Discrete-Trap Effects on 3-D NAND Variability – Part II: Random Telegraph Noise IEEE Journal of the Electron Devices Society 3-DNAND Flash memories variability random telegraph noise discrete traps |
| title | Discrete-Trap Effects on 3-D NAND Variability – Part II: Random Telegraph Noise |
| title_full | Discrete-Trap Effects on 3-D NAND Variability – Part II: Random Telegraph Noise |
| title_fullStr | Discrete-Trap Effects on 3-D NAND Variability – Part II: Random Telegraph Noise |
| title_full_unstemmed | Discrete-Trap Effects on 3-D NAND Variability – Part II: Random Telegraph Noise |
| title_short | Discrete-Trap Effects on 3-D NAND Variability – Part II: Random Telegraph Noise |
| title_sort | discrete trap effects on 3 d nand variability x2013 part ii random telegraph noise |
| topic | 3-DNAND Flash memories variability random telegraph noise discrete traps |
| url | https://ieeexplore.ieee.org/document/10643403/ |
| work_keys_str_mv | AT gerardomalavena discretetrapeffectson3dnandvariabilityx2013partiirandomtelegraphnoise AT salvatoremamoroso discretetrapeffectson3dnandvariabilityx2013partiirandomtelegraphnoise AT andrewrbrown discretetrapeffectson3dnandvariabilityx2013partiirandomtelegraphnoise AT plamenasenov discretetrapeffectson3dnandvariabilityx2013partiirandomtelegraphnoise AT xiweilin discretetrapeffectson3dnandvariabilityx2013partiirandomtelegraphnoise AT victormoroz discretetrapeffectson3dnandvariabilityx2013partiirandomtelegraphnoise AT mattiagiulianini discretetrapeffectson3dnandvariabilityx2013partiirandomtelegraphnoise AT davidrefaldi discretetrapeffectson3dnandvariabilityx2013partiirandomtelegraphnoise AT christianmonziocompagnoni discretetrapeffectson3dnandvariabilityx2013partiirandomtelegraphnoise AT alessandrosspinelli discretetrapeffectson3dnandvariabilityx2013partiirandomtelegraphnoise |