Deep-Learning Based Depth-Tracking of Stacking-Faults in Epitaxially Grown Silicon Wafers
Stacking faults in epitaxial silicon wafers are structural defects that can reduce the recombination lifetime of the final solar cells significantly. They are known to originate mostly at the interface between substrate and deposited layer, at contamination particles and atomic steps. This work pre...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
TIB Open Publishing
2025-02-01
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| Series: | SiliconPV Conference Proceedings |
| Subjects: | |
| Online Access: | https://www.tib-op.org/ojs/index.php/siliconpv/article/view/1265 |
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