Influence of Absorber Contents and Temperatures on the Dielectric Properties and Microwave Absorbing Performances of C@TiC/SiO<sub>2</sub> Composites

TiC provides a promising potential for high-temperature microwave absorbers due to its unique combination of thermal stability, high electrical conductivity, and robust structural integrity. C@TiC/SiO<sub>2</sub> composites were successfully fabricated using a simple blending and cold-pr...

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Bibliographic Details
Main Authors: Yan Wang, Xin Sun, Zhihe Xiao, Jian Gu, Qinyi Dong, Shuhang Yi, Junyang Jin
Format: Article
Language:English
Published: MDPI AG 2024-12-01
Series:Nanomaterials
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Online Access:https://www.mdpi.com/2079-4991/14/24/2033
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Summary:TiC provides a promising potential for high-temperature microwave absorbers due to its unique combination of thermal stability, high electrical conductivity, and robust structural integrity. C@TiC/SiO<sub>2</sub> composites were successfully fabricated using a simple blending and cold-pressing method. The effects of C@TiC’s absorbent content and temperature on the dielectric and microwave absorption properties of C@TiC/SiO<sub>2</sub> composites were investigated. The addition of C@TiC from 10 wt.% to 30 wt.% not only endows the composites with a higher dielectric constant and dielectric loss, but also with a greater high-temperature stability in terms of dielectric and microwave absorption properties. The composite with 30 wt.%C@TiC demonstrates a strong microwave absorption capability with a minimum reflection loss (<i>RL<sub>min</sub></i>) of −55.87 dB, −48.49 dB, and −40.36 dB at room temperature, 50 °C, and 100 °C, respectively; the 50 wt.%C@TiC composite exhibits an enhanced high-temperature microwave absorption performance with an <i>RL</i><sub>min</sub> of −16.13 dB and −15.72 dB at 200 °C and 300 °C, respectively. This study demonstrates that the TiC-based absorbers present an innovative solution for high-temperature microwave absorption, providing stability, versatility, and adaptability in extreme operational environments.
ISSN:2079-4991