Oxide Nanomaterials Based on SnO2 for Semiconductor Hydrogen Sensors

Nanosized tin dioxide with an average particle size of 5.3 nm was synthesized by a sol-gel method and characterized by IR spectroscopy, TEM, X-ray, and electron diffraction. The obtained SnO2 can be used as initial material for creation of gas-sensitive layers of adsorption semiconductor sensors. Ad...

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Main Authors: George Fedorenko, Ludmila Oleksenko, Nelly Maksymovych
Format: Article
Language:English
Published: Wiley 2019-01-01
Series:Advances in Materials Science and Engineering
Online Access:http://dx.doi.org/10.1155/2019/5190235
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author George Fedorenko
Ludmila Oleksenko
Nelly Maksymovych
author_facet George Fedorenko
Ludmila Oleksenko
Nelly Maksymovych
author_sort George Fedorenko
collection DOAJ
description Nanosized tin dioxide with an average particle size of 5.3 nm was synthesized by a sol-gel method and characterized by IR spectroscopy, TEM, X-ray, and electron diffraction. The obtained SnO2 can be used as initial material for creation of gas-sensitive layers of adsorption semiconductor sensors. Addition of palladium into the initial nanomaterial allows to improve response to hydrogen of such sensors in comparison with sensors based on undoped SnO2 and provides fast response and recovery time, a wide measuring range of hydrogen content in air ambient, and good repeatability of the sensor signal. Such promising properties could make useful the sensors based on these nanomaterials for devices intended to determine hydrogen in air.
format Article
id doaj-art-08a6d3cd771a4762b404851d89b7e08b
institution Kabale University
issn 1687-8434
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language English
publishDate 2019-01-01
publisher Wiley
record_format Article
series Advances in Materials Science and Engineering
spelling doaj-art-08a6d3cd771a4762b404851d89b7e08b2025-02-03T01:07:19ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422019-01-01201910.1155/2019/51902355190235Oxide Nanomaterials Based on SnO2 for Semiconductor Hydrogen SensorsGeorge Fedorenko0Ludmila Oleksenko1Nelly Maksymovych2Taras Shevchenko National University of Kyiv, 62a Volodymyrska Str., Kyiv 01601, UkraineTaras Shevchenko National University of Kyiv, 62a Volodymyrska Str., Kyiv 01601, UkraineTaras Shevchenko National University of Kyiv, 62a Volodymyrska Str., Kyiv 01601, UkraineNanosized tin dioxide with an average particle size of 5.3 nm was synthesized by a sol-gel method and characterized by IR spectroscopy, TEM, X-ray, and electron diffraction. The obtained SnO2 can be used as initial material for creation of gas-sensitive layers of adsorption semiconductor sensors. Addition of palladium into the initial nanomaterial allows to improve response to hydrogen of such sensors in comparison with sensors based on undoped SnO2 and provides fast response and recovery time, a wide measuring range of hydrogen content in air ambient, and good repeatability of the sensor signal. Such promising properties could make useful the sensors based on these nanomaterials for devices intended to determine hydrogen in air.http://dx.doi.org/10.1155/2019/5190235
spellingShingle George Fedorenko
Ludmila Oleksenko
Nelly Maksymovych
Oxide Nanomaterials Based on SnO2 for Semiconductor Hydrogen Sensors
Advances in Materials Science and Engineering
title Oxide Nanomaterials Based on SnO2 for Semiconductor Hydrogen Sensors
title_full Oxide Nanomaterials Based on SnO2 for Semiconductor Hydrogen Sensors
title_fullStr Oxide Nanomaterials Based on SnO2 for Semiconductor Hydrogen Sensors
title_full_unstemmed Oxide Nanomaterials Based on SnO2 for Semiconductor Hydrogen Sensors
title_short Oxide Nanomaterials Based on SnO2 for Semiconductor Hydrogen Sensors
title_sort oxide nanomaterials based on sno2 for semiconductor hydrogen sensors
url http://dx.doi.org/10.1155/2019/5190235
work_keys_str_mv AT georgefedorenko oxidenanomaterialsbasedonsno2forsemiconductorhydrogensensors
AT ludmilaoleksenko oxidenanomaterialsbasedonsno2forsemiconductorhydrogensensors
AT nellymaksymovych oxidenanomaterialsbasedonsno2forsemiconductorhydrogensensors