Oxide Nanomaterials Based on SnO2 for Semiconductor Hydrogen Sensors
Nanosized tin dioxide with an average particle size of 5.3 nm was synthesized by a sol-gel method and characterized by IR spectroscopy, TEM, X-ray, and electron diffraction. The obtained SnO2 can be used as initial material for creation of gas-sensitive layers of adsorption semiconductor sensors. Ad...
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Format: | Article |
Language: | English |
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Wiley
2019-01-01
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Series: | Advances in Materials Science and Engineering |
Online Access: | http://dx.doi.org/10.1155/2019/5190235 |
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author | George Fedorenko Ludmila Oleksenko Nelly Maksymovych |
author_facet | George Fedorenko Ludmila Oleksenko Nelly Maksymovych |
author_sort | George Fedorenko |
collection | DOAJ |
description | Nanosized tin dioxide with an average particle size of 5.3 nm was synthesized by a sol-gel method and characterized by IR spectroscopy, TEM, X-ray, and electron diffraction. The obtained SnO2 can be used as initial material for creation of gas-sensitive layers of adsorption semiconductor sensors. Addition of palladium into the initial nanomaterial allows to improve response to hydrogen of such sensors in comparison with sensors based on undoped SnO2 and provides fast response and recovery time, a wide measuring range of hydrogen content in air ambient, and good repeatability of the sensor signal. Such promising properties could make useful the sensors based on these nanomaterials for devices intended to determine hydrogen in air. |
format | Article |
id | doaj-art-08a6d3cd771a4762b404851d89b7e08b |
institution | Kabale University |
issn | 1687-8434 1687-8442 |
language | English |
publishDate | 2019-01-01 |
publisher | Wiley |
record_format | Article |
series | Advances in Materials Science and Engineering |
spelling | doaj-art-08a6d3cd771a4762b404851d89b7e08b2025-02-03T01:07:19ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422019-01-01201910.1155/2019/51902355190235Oxide Nanomaterials Based on SnO2 for Semiconductor Hydrogen SensorsGeorge Fedorenko0Ludmila Oleksenko1Nelly Maksymovych2Taras Shevchenko National University of Kyiv, 62a Volodymyrska Str., Kyiv 01601, UkraineTaras Shevchenko National University of Kyiv, 62a Volodymyrska Str., Kyiv 01601, UkraineTaras Shevchenko National University of Kyiv, 62a Volodymyrska Str., Kyiv 01601, UkraineNanosized tin dioxide with an average particle size of 5.3 nm was synthesized by a sol-gel method and characterized by IR spectroscopy, TEM, X-ray, and electron diffraction. The obtained SnO2 can be used as initial material for creation of gas-sensitive layers of adsorption semiconductor sensors. Addition of palladium into the initial nanomaterial allows to improve response to hydrogen of such sensors in comparison with sensors based on undoped SnO2 and provides fast response and recovery time, a wide measuring range of hydrogen content in air ambient, and good repeatability of the sensor signal. Such promising properties could make useful the sensors based on these nanomaterials for devices intended to determine hydrogen in air.http://dx.doi.org/10.1155/2019/5190235 |
spellingShingle | George Fedorenko Ludmila Oleksenko Nelly Maksymovych Oxide Nanomaterials Based on SnO2 for Semiconductor Hydrogen Sensors Advances in Materials Science and Engineering |
title | Oxide Nanomaterials Based on SnO2 for Semiconductor Hydrogen Sensors |
title_full | Oxide Nanomaterials Based on SnO2 for Semiconductor Hydrogen Sensors |
title_fullStr | Oxide Nanomaterials Based on SnO2 for Semiconductor Hydrogen Sensors |
title_full_unstemmed | Oxide Nanomaterials Based on SnO2 for Semiconductor Hydrogen Sensors |
title_short | Oxide Nanomaterials Based on SnO2 for Semiconductor Hydrogen Sensors |
title_sort | oxide nanomaterials based on sno2 for semiconductor hydrogen sensors |
url | http://dx.doi.org/10.1155/2019/5190235 |
work_keys_str_mv | AT georgefedorenko oxidenanomaterialsbasedonsno2forsemiconductorhydrogensensors AT ludmilaoleksenko oxidenanomaterialsbasedonsno2forsemiconductorhydrogensensors AT nellymaksymovych oxidenanomaterialsbasedonsno2forsemiconductorhydrogensensors |