Some Electrical and Photoelectrical Properties of Conducting Polymer Graphene Composite /n-Silicon Heterojunction Diode

In this study, polythiophene-graphene (PTh-G) composite thin film was prepared on the n-type silicon (n-Si) semiconductor wafer by the spin coating method. Subsequently, the current-voltage (I-V) measurements were made on the fabricated Au/PTh-G/n-Si/Al device to ascertain the impact of the PTh-G in...

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Bibliographic Details
Main Author: Elif Daş
Format: Article
Language:English
Published: Sakarya University 2022-10-01
Series:Sakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi
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Online Access:https://dergipark.org.tr/tr/download/article-file/2482260
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