The Effect of Yttrium Addition on the Microstructures and Electrical Properties of CuMn Alloy Thin Films
In this study, we fabricated thin-film resistors using CuMn and yttrium targets by DC/RF magnetron cosputtering. CuMnY-resistive thin films were deposited onto glass and Al2O3 substrates. The electrical properties and microstructures of CuMn alloy films with different yttrium content were investigat...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2019-01-01
|
| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2019/6578350 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832554773990080512 |
|---|---|
| author | Ho-Yun Lee Chi-Wei He Ying-Chieh Lee |
| author_facet | Ho-Yun Lee Chi-Wei He Ying-Chieh Lee |
| author_sort | Ho-Yun Lee |
| collection | DOAJ |
| description | In this study, we fabricated thin-film resistors using CuMn and yttrium targets by DC/RF magnetron cosputtering. CuMnY-resistive thin films were deposited onto glass and Al2O3 substrates. The electrical properties and microstructures of CuMn alloy films with different yttrium content were investigated. The CuMnY films were annealed at temperature ranging from 250°C to 350°C in N2 atmosphere. The phase variation, microstructure, film thickness, and constitutional analysis of CuMnY films were characterized using X-ray diffraction, field emission scanning, and high-resolution transmission electron microscopy and related energy dispersive X-ray analyses (XRD, FESEM, and HRTEM/EDX). It was found that CuMnY alloy films separated into two parts after annealing. The first part is the MnO phase on the bottom side of the film. The second part is an amorphous structure on the upper side of the film. The MnO phase is a microcrystalline that exists in CuMn films, which is dependent on the Y content and annealing temperature. CuMn alloy films with 15.7% yttrium addition annealed at 300°C exhibited higher resistivity ∼4000 μΩ-cm with −41 ppm/°C of temperature coefficient of resistance (TCR). |
| format | Article |
| id | doaj-art-06de954ddadc4c3cbe8b569f015ee05b |
| institution | Kabale University |
| issn | 1687-8434 1687-8442 |
| language | English |
| publishDate | 2019-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advances in Materials Science and Engineering |
| spelling | doaj-art-06de954ddadc4c3cbe8b569f015ee05b2025-02-03T05:50:34ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422019-01-01201910.1155/2019/65783506578350The Effect of Yttrium Addition on the Microstructures and Electrical Properties of CuMn Alloy Thin FilmsHo-Yun Lee0Chi-Wei He1Ying-Chieh Lee2Department of Material Science and Engineering, École Polytechnique Fédérale de Lausanne, Lausanne, SwitzerlandDepartment of Materials Engineering, National Pingtung University of Science & Technology, Pingtung 91201, TaiwanDepartment of Materials Engineering, National Pingtung University of Science & Technology, Pingtung 91201, TaiwanIn this study, we fabricated thin-film resistors using CuMn and yttrium targets by DC/RF magnetron cosputtering. CuMnY-resistive thin films were deposited onto glass and Al2O3 substrates. The electrical properties and microstructures of CuMn alloy films with different yttrium content were investigated. The CuMnY films were annealed at temperature ranging from 250°C to 350°C in N2 atmosphere. The phase variation, microstructure, film thickness, and constitutional analysis of CuMnY films were characterized using X-ray diffraction, field emission scanning, and high-resolution transmission electron microscopy and related energy dispersive X-ray analyses (XRD, FESEM, and HRTEM/EDX). It was found that CuMnY alloy films separated into two parts after annealing. The first part is the MnO phase on the bottom side of the film. The second part is an amorphous structure on the upper side of the film. The MnO phase is a microcrystalline that exists in CuMn films, which is dependent on the Y content and annealing temperature. CuMn alloy films with 15.7% yttrium addition annealed at 300°C exhibited higher resistivity ∼4000 μΩ-cm with −41 ppm/°C of temperature coefficient of resistance (TCR).http://dx.doi.org/10.1155/2019/6578350 |
| spellingShingle | Ho-Yun Lee Chi-Wei He Ying-Chieh Lee The Effect of Yttrium Addition on the Microstructures and Electrical Properties of CuMn Alloy Thin Films Advances in Materials Science and Engineering |
| title | The Effect of Yttrium Addition on the Microstructures and Electrical Properties of CuMn Alloy Thin Films |
| title_full | The Effect of Yttrium Addition on the Microstructures and Electrical Properties of CuMn Alloy Thin Films |
| title_fullStr | The Effect of Yttrium Addition on the Microstructures and Electrical Properties of CuMn Alloy Thin Films |
| title_full_unstemmed | The Effect of Yttrium Addition on the Microstructures and Electrical Properties of CuMn Alloy Thin Films |
| title_short | The Effect of Yttrium Addition on the Microstructures and Electrical Properties of CuMn Alloy Thin Films |
| title_sort | effect of yttrium addition on the microstructures and electrical properties of cumn alloy thin films |
| url | http://dx.doi.org/10.1155/2019/6578350 |
| work_keys_str_mv | AT hoyunlee theeffectofyttriumadditiononthemicrostructuresandelectricalpropertiesofcumnalloythinfilms AT chiweihe theeffectofyttriumadditiononthemicrostructuresandelectricalpropertiesofcumnalloythinfilms AT yingchiehlee theeffectofyttriumadditiononthemicrostructuresandelectricalpropertiesofcumnalloythinfilms AT hoyunlee effectofyttriumadditiononthemicrostructuresandelectricalpropertiesofcumnalloythinfilms AT chiweihe effectofyttriumadditiononthemicrostructuresandelectricalpropertiesofcumnalloythinfilms AT yingchiehlee effectofyttriumadditiononthemicrostructuresandelectricalpropertiesofcumnalloythinfilms |