Electrical and Optical Properties of Ge𝑥Si𝟏−𝑥:H Thin Films Prepared by Thermal Evaporation Method
Thin a-Ge𝑥Si1−𝑥:H films were grown successfully by fabrication of designated ingot followed by evaporation onto glass slides. A range of growth conditions, Ge contents, dopant concentration (Al and As), and substrate temperature, were employed. Stoichiometry of the thin films composition was confirm...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2010-01-01
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| Series: | Advances in Condensed Matter Physics |
| Online Access: | http://dx.doi.org/10.1155/2010/428739 |
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