Junction Parameter Extraction for Electronic Device Characterization
A new method for the extraction of junction parameters from a description of the current–voltage characteristic is developed. A simulation is performed and a high accuracy is obtained for the determination of the singleexponential model parameters. The method is easy to implement in a control proces...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2004-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1080/1042015031000073805 |
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| _version_ | 1832567841951318016 |
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| author | S. Dib C. Salame N. Toufik A. Khoury F. Pélanchon P. Mialhe |
| author_facet | S. Dib C. Salame N. Toufik A. Khoury F. Pélanchon P. Mialhe |
| author_sort | S. Dib |
| collection | DOAJ |
| description | A new method for the extraction of junction parameters from a description of the current–voltage characteristic is developed. A simulation is performed and a high accuracy is obtained for the determination of the singleexponential model parameters. The method is easy to implement in a control process for device characterization. An application, achieved to observe the degradation of the emitter–base junction of a bipolar transistor during an
aging experiment, shows that the evolutions of the single exponential model parameters versus time introduce a means for degradation quantification. |
| format | Article |
| id | doaj-art-06dcf81732a6469db19bf1a87d449e26 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2004-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-06dcf81732a6469db19bf1a87d449e262025-02-03T01:00:24ZengWileyActive and Passive Electronic Components0882-75161563-50312004-01-01272616710.1080/1042015031000073805Junction Parameter Extraction for Electronic Device CharacterizationS. Dib0C. Salame1N. Toufik2A. Khoury3F. Pélanchon4P. Mialhe5Laboratoire LPSE, Département de Physique, Université Libanaise-Faculté de Sciences II, Jdeidet BP 90656, LebanonLaboratoire LPSE, Département de Physique, Université Libanaise-Faculté de Sciences II, Jdeidet BP 90656, LebanonLP2A, Université de Perpignan, 52 Avenue de Villeneuve, Perpignan Cedex 66 860, FranceLaboratoire LPSE, Département de Physique, Université Libanaise-Faculté de Sciences II, Jdeidet BP 90656, LebanonLP2A, Université de Perpignan, 52 Avenue de Villeneuve, Perpignan Cedex 66 860, FranceLP2A, Université de Perpignan, 52 Avenue de Villeneuve, Perpignan Cedex 66 860, FranceA new method for the extraction of junction parameters from a description of the current–voltage characteristic is developed. A simulation is performed and a high accuracy is obtained for the determination of the singleexponential model parameters. The method is easy to implement in a control process for device characterization. An application, achieved to observe the degradation of the emitter–base junction of a bipolar transistor during an aging experiment, shows that the evolutions of the single exponential model parameters versus time introduce a means for degradation quantification.http://dx.doi.org/10.1080/1042015031000073805 |
| spellingShingle | S. Dib C. Salame N. Toufik A. Khoury F. Pélanchon P. Mialhe Junction Parameter Extraction for Electronic Device Characterization Active and Passive Electronic Components |
| title | Junction Parameter Extraction for Electronic Device Characterization |
| title_full | Junction Parameter Extraction for Electronic Device Characterization |
| title_fullStr | Junction Parameter Extraction for Electronic Device Characterization |
| title_full_unstemmed | Junction Parameter Extraction for Electronic Device Characterization |
| title_short | Junction Parameter Extraction for Electronic Device Characterization |
| title_sort | junction parameter extraction for electronic device characterization |
| url | http://dx.doi.org/10.1080/1042015031000073805 |
| work_keys_str_mv | AT sdib junctionparameterextractionforelectronicdevicecharacterization AT csalame junctionparameterextractionforelectronicdevicecharacterization AT ntoufik junctionparameterextractionforelectronicdevicecharacterization AT akhoury junctionparameterextractionforelectronicdevicecharacterization AT fpelanchon junctionparameterextractionforelectronicdevicecharacterization AT pmialhe junctionparameterextractionforelectronicdevicecharacterization |