Properties of Cu(In,Ga)Se2 Thin Films and Solar Cells Deposited by Hybrid Process
Cu(In,Ga)Se2 solar cells were fabricated using a hybrid cosputtering/evaporation process, and efficiencies as high as 12.4% were achieved. The films were characterized by energy-dispersive X-ray spectroscopy, glancing incidence X-ray diffraction, scanning electron microscopy, auger electron spectros...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2012-01-01
|
| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2012/385185 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832564657323245568 |
|---|---|
| author | S. Marsillac H. Khatri K. Aryal R.W. Collins |
| author_facet | S. Marsillac H. Khatri K. Aryal R.W. Collins |
| author_sort | S. Marsillac |
| collection | DOAJ |
| description | Cu(In,Ga)Se2 solar cells were fabricated using a hybrid cosputtering/evaporation process, and efficiencies as high as 12.4% were achieved. The films were characterized by energy-dispersive X-ray spectroscopy, glancing incidence X-ray diffraction, scanning electron microscopy, auger electron spectroscopy, and transmittance and reflectance spectroscopy, and their properties were compared to the ones of films deposited by coevaporation. Even though the films were relatively similar, the ones deposited by the hybrid process tend to have smaller grains with a slightly preferred orientation along the (112) axis and a rougher surface. Both types of films have uniform composition through the depth. Characterization of these films by variable angle of incidence spectroscopic ellipsometry allowed for the calculation of the position of the critical points, via calculation of the second derivative of the dielectric function and fit with critical points parabolic band oscillators. The solar cells were then characterized by current-voltage and quantum efficiency measurements. An analysis of the diode parameters indicates that the cells are mostly limited by a low fill factor, associated mostly with a high diode quality factor (𝐴−1.8) and high series resistance (𝑅𝑠∼1.1 Ω-cm2)
. |
| format | Article |
| id | doaj-art-05b864e0a84e49c28136322a0638acbc |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2012-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-05b864e0a84e49c28136322a0638acbc2025-02-03T01:10:23ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2012-01-01201210.1155/2012/385185385185Properties of Cu(In,Ga)Se2 Thin Films and Solar Cells Deposited by Hybrid ProcessS. Marsillac0H. Khatri1K. Aryal2R.W. Collins3Department of Electrical and Computer Engineering, Old Dominion University, Norfolk, VA 23529, USAWright Center for Photovoltaics Innovation and Commercialization, University of Toledo, Toledo, OH 43606, USADepartment of Electrical and Computer Engineering, Old Dominion University, Norfolk, VA 23529, USAWright Center for Photovoltaics Innovation and Commercialization, University of Toledo, Toledo, OH 43606, USACu(In,Ga)Se2 solar cells were fabricated using a hybrid cosputtering/evaporation process, and efficiencies as high as 12.4% were achieved. The films were characterized by energy-dispersive X-ray spectroscopy, glancing incidence X-ray diffraction, scanning electron microscopy, auger electron spectroscopy, and transmittance and reflectance spectroscopy, and their properties were compared to the ones of films deposited by coevaporation. Even though the films were relatively similar, the ones deposited by the hybrid process tend to have smaller grains with a slightly preferred orientation along the (112) axis and a rougher surface. Both types of films have uniform composition through the depth. Characterization of these films by variable angle of incidence spectroscopic ellipsometry allowed for the calculation of the position of the critical points, via calculation of the second derivative of the dielectric function and fit with critical points parabolic band oscillators. The solar cells were then characterized by current-voltage and quantum efficiency measurements. An analysis of the diode parameters indicates that the cells are mostly limited by a low fill factor, associated mostly with a high diode quality factor (𝐴−1.8) and high series resistance (𝑅𝑠∼1.1 Ω-cm2) .http://dx.doi.org/10.1155/2012/385185 |
| spellingShingle | S. Marsillac H. Khatri K. Aryal R.W. Collins Properties of Cu(In,Ga)Se2 Thin Films and Solar Cells Deposited by Hybrid Process International Journal of Photoenergy |
| title | Properties of Cu(In,Ga)Se2 Thin Films and Solar Cells Deposited by Hybrid Process |
| title_full | Properties of Cu(In,Ga)Se2 Thin Films and Solar Cells Deposited by Hybrid Process |
| title_fullStr | Properties of Cu(In,Ga)Se2 Thin Films and Solar Cells Deposited by Hybrid Process |
| title_full_unstemmed | Properties of Cu(In,Ga)Se2 Thin Films and Solar Cells Deposited by Hybrid Process |
| title_short | Properties of Cu(In,Ga)Se2 Thin Films and Solar Cells Deposited by Hybrid Process |
| title_sort | properties of cu in ga se2 thin films and solar cells deposited by hybrid process |
| url | http://dx.doi.org/10.1155/2012/385185 |
| work_keys_str_mv | AT smarsillac propertiesofcuingase2thinfilmsandsolarcellsdepositedbyhybridprocess AT hkhatri propertiesofcuingase2thinfilmsandsolarcellsdepositedbyhybridprocess AT karyal propertiesofcuingase2thinfilmsandsolarcellsdepositedbyhybridprocess AT rwcollins propertiesofcuingase2thinfilmsandsolarcellsdepositedbyhybridprocess |