Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layer
The nanocrystalline silicon-germanium (nc-SiGe) thin films were deposited by high-frequency (27.12 MHz) plasma-enhanced chemical vapor deposition (HF-PECVD). The films were used in a silicon-based thin film solar cell with graded-dead absorption layer. The characterization of the nc-SiGe films are a...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2012-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2012/890284 |
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| _version_ | 1832559948134875136 |
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| author | Chao-Chun Wang Dong-Sing Wuu Shui-Yang Lien Yang-Shih Lin Chueh-Yang Liu Chia-Hsum Hsu Chia-Fu Chen |
| author_facet | Chao-Chun Wang Dong-Sing Wuu Shui-Yang Lien Yang-Shih Lin Chueh-Yang Liu Chia-Hsum Hsu Chia-Fu Chen |
| author_sort | Chao-Chun Wang |
| collection | DOAJ |
| description | The nanocrystalline silicon-germanium (nc-SiGe) thin films were deposited by high-frequency (27.12 MHz) plasma-enhanced chemical vapor deposition (HF-PECVD). The films were used in a silicon-based thin film solar cell with graded-dead absorption layer. The characterization of the nc-SiGe films are analyzed by scanning electron microscopy, UV-visible spectroscopy, and Fourier transform infrared absorption spectroscopy. The band gap of SiGe alloy can be adjusted between 0.8 and 1.7 eV by varying the gas ratio. For thin film solar cell application, using double graded-dead i-SiGe layers mainly leads to an increase in short-circuit current and therefore cell conversion efficiency. An initial conversion efficiency of 5.06% and the stabilized efficiency of 4.63% for an nc-SiGe solar cell were achieved. |
| format | Article |
| id | doaj-art-05511d2e20364a42bfeccce4820b42e5 |
| institution | Kabale University |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2012-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-05511d2e20364a42bfeccce4820b42e52025-02-03T01:28:44ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2012-01-01201210.1155/2012/890284890284Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption LayerChao-Chun Wang0Dong-Sing Wuu1Shui-Yang Lien2Yang-Shih Lin3Chueh-Yang Liu4Chia-Hsum Hsu5Chia-Fu Chen6Department of Materials Science and Engineering, National Chung Hsing University, 250 Kuo Kuang Road, Taichung 402, TaiwanDepartment of Materials Science and Engineering, National Chung Hsing University, 250 Kuo Kuang Road, Taichung 402, TaiwanDepartment of Materials Science and Engineering, MingDao University, ChungHua 52345, TaiwanDepartment of Materials Science and Engineering, National Chung Hsing University, 250 Kuo Kuang Road, Taichung 402, TaiwanDepartment of Materials Science and Engineering, MingDao University, ChungHua 52345, TaiwanGraduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, TaiwanDepartment of Materials Science and Engineering, MingDao University, ChungHua 52345, TaiwanThe nanocrystalline silicon-germanium (nc-SiGe) thin films were deposited by high-frequency (27.12 MHz) plasma-enhanced chemical vapor deposition (HF-PECVD). The films were used in a silicon-based thin film solar cell with graded-dead absorption layer. The characterization of the nc-SiGe films are analyzed by scanning electron microscopy, UV-visible spectroscopy, and Fourier transform infrared absorption spectroscopy. The band gap of SiGe alloy can be adjusted between 0.8 and 1.7 eV by varying the gas ratio. For thin film solar cell application, using double graded-dead i-SiGe layers mainly leads to an increase in short-circuit current and therefore cell conversion efficiency. An initial conversion efficiency of 5.06% and the stabilized efficiency of 4.63% for an nc-SiGe solar cell were achieved.http://dx.doi.org/10.1155/2012/890284 |
| spellingShingle | Chao-Chun Wang Dong-Sing Wuu Shui-Yang Lien Yang-Shih Lin Chueh-Yang Liu Chia-Hsum Hsu Chia-Fu Chen Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layer International Journal of Photoenergy |
| title | Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layer |
| title_full | Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layer |
| title_fullStr | Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layer |
| title_full_unstemmed | Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layer |
| title_short | Characterization of Nanocrystalline SiGe Thin Film Solar Cell with Double Graded-Dead Absorption Layer |
| title_sort | characterization of nanocrystalline sige thin film solar cell with double graded dead absorption layer |
| url | http://dx.doi.org/10.1155/2012/890284 |
| work_keys_str_mv | AT chaochunwang characterizationofnanocrystallinesigethinfilmsolarcellwithdoublegradeddeadabsorptionlayer AT dongsingwuu characterizationofnanocrystallinesigethinfilmsolarcellwithdoublegradeddeadabsorptionlayer AT shuiyanglien characterizationofnanocrystallinesigethinfilmsolarcellwithdoublegradeddeadabsorptionlayer AT yangshihlin characterizationofnanocrystallinesigethinfilmsolarcellwithdoublegradeddeadabsorptionlayer AT chuehyangliu characterizationofnanocrystallinesigethinfilmsolarcellwithdoublegradeddeadabsorptionlayer AT chiahsumhsu characterizationofnanocrystallinesigethinfilmsolarcellwithdoublegradeddeadabsorptionlayer AT chiafuchen characterizationofnanocrystallinesigethinfilmsolarcellwithdoublegradeddeadabsorptionlayer |