Memristor‐transistor hybrid ternary content addressable memory using ternary memristive memory cell
Abstract A memristor‐transistor hybrid ternary content addressable memory (MTCAM) with a memristor‐based ternary memory cell is proposed. New emerging devices like memristors have recently been explored to overcome the limitations of CMOS‐based memory circuits. The memristor is used as a binary memo...
Saved in:
Main Authors: | Masoodur Rahman Khan, ABM Harun‐ur Rashid |
---|---|
Format: | Article |
Language: | English |
Published: |
Wiley
2021-10-01
|
Series: | IET Circuits, Devices and Systems |
Subjects: | |
Online Access: | https://doi.org/10.1049/cds2.12057 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Pinched hysteresis loops in non‐linear resonators
by: Ahmed S. Elwakil, et al.
Published: (2021-03-01) -
A low‐offset low‐power and high‐speed dynamic latch comparator with a preamplifier‐enhanced stage
by: Jérôme K. Folla, et al.
Published: (2021-01-01) -
Ultra-Wideband 4-Bit Distributed Phase Shifters Using Lattice Network at <italic>K/Ka</italic>- and <italic>E/W</italic>-Band
by: Sungwon Kwon, et al.
Published: (2024-01-01) -
Transistor Circuit Design,
Published: (1963) -
TVD‐PB logic circuit based on camouflaging circuit for IoT security
by: Yuejun Zhang, et al.
Published: (2022-01-01)