Direct Growth of High-Quality InP Layers on GaAs Substrates by MOCVD
In this report, we have overcome the drawback of surface roughness of metamorphic buffer layer by LP-MOCVD technique and have grown InP metamorphic buffer layers with various thickness on misoriented GaAs (1 0 0) substrates with 10 degree towards (1 1 1)A. The grown films are characterized by optica...
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| Format: | Article |
| Language: | English |
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Wiley
2003-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1080/0882751031000073797 |
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| author | K. F. Yarn W. C. Chien C. L. Lin C. I. Liao |
| author_facet | K. F. Yarn W. C. Chien C. L. Lin C. I. Liao |
| author_sort | K. F. Yarn |
| collection | DOAJ |
| description | In this report, we have overcome the drawback of surface roughness of metamorphic buffer layer by LP-MOCVD technique and have grown InP metamorphic buffer layers with various thickness on misoriented GaAs (1 0 0) substrates with 10 degree towards (1 1 1)A. The grown films are characterized by optical microscopy, atomic force microscopy, secondary ion mass spectrometry, transmission electron microscopy and double-crystal X-ray diffraction. We also analyze the surface morphology, which is dependent on growth temperature, group III and
group V partial pressure, growth rate and V/III ratios. A mirror-like, uniform surface and high crystal quality of the metamorphic buffer layer directly grown on a GaAs substrate can be achieved. Finally, to investigate the performance of the metamorphic microwave devices, we also fabricate the InAlAs/InGaAs metamorphic HEMT on GaAs substrates. |
| format | Article |
| id | doaj-art-041f2303f1cd4910bbff64957d6d20f8 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2003-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-041f2303f1cd4910bbff64957d6d20f82025-02-03T01:10:16ZengWileyActive and Passive Electronic Components0882-75161563-50312003-01-01262717910.1080/0882751031000073797Direct Growth of High-Quality InP Layers on GaAs Substrates by MOCVDK. F. Yarn0W. C. Chien1C. L. Lin2C. I. Liao3Far East College, Department of Electrical Engineering, Optoelectronic Semiconductor Center, Hsin-Shih, Tainan, Taiwan 744, ChinaFar East College, Department of Electrical Engineering, Optoelectronic Semiconductor Center, Hsin-Shih, Tainan, Taiwan 744, ChinaDepartment of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan 701, ChinaDepartment of Electrical Engineering, National Cheng-Kung University, Tainan, Taiwan 701, ChinaIn this report, we have overcome the drawback of surface roughness of metamorphic buffer layer by LP-MOCVD technique and have grown InP metamorphic buffer layers with various thickness on misoriented GaAs (1 0 0) substrates with 10 degree towards (1 1 1)A. The grown films are characterized by optical microscopy, atomic force microscopy, secondary ion mass spectrometry, transmission electron microscopy and double-crystal X-ray diffraction. We also analyze the surface morphology, which is dependent on growth temperature, group III and group V partial pressure, growth rate and V/III ratios. A mirror-like, uniform surface and high crystal quality of the metamorphic buffer layer directly grown on a GaAs substrate can be achieved. Finally, to investigate the performance of the metamorphic microwave devices, we also fabricate the InAlAs/InGaAs metamorphic HEMT on GaAs substrates.http://dx.doi.org/10.1080/0882751031000073797 |
| spellingShingle | K. F. Yarn W. C. Chien C. L. Lin C. I. Liao Direct Growth of High-Quality InP Layers on GaAs Substrates by MOCVD Active and Passive Electronic Components |
| title | Direct Growth of High-Quality InP Layers on GaAs Substrates by MOCVD |
| title_full | Direct Growth of High-Quality InP Layers on GaAs Substrates by MOCVD |
| title_fullStr | Direct Growth of High-Quality InP Layers on GaAs Substrates by MOCVD |
| title_full_unstemmed | Direct Growth of High-Quality InP Layers on GaAs Substrates by MOCVD |
| title_short | Direct Growth of High-Quality InP Layers on GaAs Substrates by MOCVD |
| title_sort | direct growth of high quality inp layers on gaas substrates by mocvd |
| url | http://dx.doi.org/10.1080/0882751031000073797 |
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