Interfacial Dynamic Velocity for Solar Cell Characterization

A new parameter for solar cell characterization has been introduced. The n–P junction has been considered as an active interface and an interfacial dynamic velocity is defined at the base boundary of the space charge region. We show that this interracial dynamic velocity depends on the base width, b...

Full description

Saved in:
Bibliographic Details
Main Authors: J. Farah, B. Azar, A. Khoury, P. Mialhe
Format: Article
Language:English
Published: Wiley 1997-01-01
Series:Active and Passive Electronic Components
Online Access:http://dx.doi.org/10.1155/1997/35769
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1832564586869424128
author J. Farah
B. Azar
A. Khoury
P. Mialhe
author_facet J. Farah
B. Azar
A. Khoury
P. Mialhe
author_sort J. Farah
collection DOAJ
description A new parameter for solar cell characterization has been introduced. The n–P junction has been considered as an active interface and an interfacial dynamic velocity is defined at the base boundary of the space charge region. We show that this interracial dynamic velocity depends on the base width, base doping profile, and the recombination velocity at the device back surface. Additionally, it is shown to be a function of the operating conditions such as the applied potential and the illumination level.
format Article
id doaj-art-033e87145d1c426aa752588bd83efd91
institution Kabale University
issn 0882-7516
1563-5031
language English
publishDate 1997-01-01
publisher Wiley
record_format Article
series Active and Passive Electronic Components
spelling doaj-art-033e87145d1c426aa752588bd83efd912025-02-03T01:10:33ZengWileyActive and Passive Electronic Components0882-75161563-50311997-01-012029510310.1155/1997/35769Interfacial Dynamic Velocity for Solar Cell CharacterizationJ. Farah0B. Azar1A. Khoury2P. Mialhe3Laboratoire de Physique des Semiconducteurs et Enédrgetique, Faculté des Sciences Fanar, B.P. 90656, JDEIDET, Liban, FranceLaboratoire de Physique des Semiconducteurs et Enédrgetique, Faculté des Sciences Fanar, B.P. 90656, JDEIDET, Liban, FranceLaboratoire de Physique des Semiconducteurs et Enédrgetique, Faculté des Sciences Fanar, B.P. 90656, JDEIDET, Liban, FranceCentre d'Etudes Fondamentales, Université de Perpignan, PERPIGNAN Cedex 66860, FranceA new parameter for solar cell characterization has been introduced. The n–P junction has been considered as an active interface and an interfacial dynamic velocity is defined at the base boundary of the space charge region. We show that this interracial dynamic velocity depends on the base width, base doping profile, and the recombination velocity at the device back surface. Additionally, it is shown to be a function of the operating conditions such as the applied potential and the illumination level.http://dx.doi.org/10.1155/1997/35769
spellingShingle J. Farah
B. Azar
A. Khoury
P. Mialhe
Interfacial Dynamic Velocity for Solar Cell Characterization
Active and Passive Electronic Components
title Interfacial Dynamic Velocity for Solar Cell Characterization
title_full Interfacial Dynamic Velocity for Solar Cell Characterization
title_fullStr Interfacial Dynamic Velocity for Solar Cell Characterization
title_full_unstemmed Interfacial Dynamic Velocity for Solar Cell Characterization
title_short Interfacial Dynamic Velocity for Solar Cell Characterization
title_sort interfacial dynamic velocity for solar cell characterization
url http://dx.doi.org/10.1155/1997/35769
work_keys_str_mv AT jfarah interfacialdynamicvelocityforsolarcellcharacterization
AT bazar interfacialdynamicvelocityforsolarcellcharacterization
AT akhoury interfacialdynamicvelocityforsolarcellcharacterization
AT pmialhe interfacialdynamicvelocityforsolarcellcharacterization