Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers
This paper introduces modeling and simulation of the noise properties of the blue-violet InGaN laser diodes. The noise is described in terms of the spectral properties of the relative intensity noise (RIN). We examine the validity of the present noise modeling by comparing the simulated results with...
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| Format: | Article |
| Language: | English |
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Wiley
2014-01-01
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| Series: | The Scientific World Journal |
| Online Access: | http://dx.doi.org/10.1155/2014/475423 |
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| _version_ | 1832552890575618048 |
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| author | Moustafa Ahmed |
| author_facet | Moustafa Ahmed |
| author_sort | Moustafa Ahmed |
| collection | DOAJ |
| description | This paper introduces modeling and simulation of the noise properties of the blue-violet InGaN laser diodes. The noise is described in terms of the spectral properties of the relative intensity noise (RIN). We examine the validity of the present noise modeling by comparing the simulated results with the experimental measurements available in literature. We also compare the obtained noise results with those of AlGaAs lasers. Also, we examine the influence of gain suppression on the quantum RIN. In addition, we examine the changes in the RIN level when describing the gain suppression by the case of inhomogeneous spectral broadening. The results show that RIN of the InGaN laser is nearly 9 dB higher than that of the AlGaAs laser. |
| format | Article |
| id | doaj-art-02888f153af447eebdbdd8dcf7884c5e |
| institution | Kabale University |
| issn | 2356-6140 1537-744X |
| language | English |
| publishDate | 2014-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | The Scientific World Journal |
| spelling | doaj-art-02888f153af447eebdbdd8dcf7884c5e2025-02-03T05:57:27ZengWileyThe Scientific World Journal2356-61401537-744X2014-01-01201410.1155/2014/475423475423Theoretical Modeling of Intensity Noise in InGaN Semiconductor LasersMoustafa Ahmed0Department of Physics, Faculty of Science, King Abdulaziz University, P.O. Box 80203, Jeddah 21589, Saudi ArabiaThis paper introduces modeling and simulation of the noise properties of the blue-violet InGaN laser diodes. The noise is described in terms of the spectral properties of the relative intensity noise (RIN). We examine the validity of the present noise modeling by comparing the simulated results with the experimental measurements available in literature. We also compare the obtained noise results with those of AlGaAs lasers. Also, we examine the influence of gain suppression on the quantum RIN. In addition, we examine the changes in the RIN level when describing the gain suppression by the case of inhomogeneous spectral broadening. The results show that RIN of the InGaN laser is nearly 9 dB higher than that of the AlGaAs laser.http://dx.doi.org/10.1155/2014/475423 |
| spellingShingle | Moustafa Ahmed Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers The Scientific World Journal |
| title | Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers |
| title_full | Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers |
| title_fullStr | Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers |
| title_full_unstemmed | Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers |
| title_short | Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers |
| title_sort | theoretical modeling of intensity noise in ingan semiconductor lasers |
| url | http://dx.doi.org/10.1155/2014/475423 |
| work_keys_str_mv | AT moustafaahmed theoreticalmodelingofintensitynoiseiningansemiconductorlasers |