Numerical Simulation Analysis on a Composite Edge Terminal Reverse Blocking IGBT

Numerical Simulation Analysis on a Composite Edge Terminal Reverse Blocking IGBT

Insulated gate bipolar transistor (IGBT) is usually used in combination with power diode in power electric circuit because it has no reverse blocking ability. In order to reduce cost and parasitic inductance, the freewheeling diode and IGBT are integrated by process method, and a reverse blocking in...

Full description

Saved in:
Bibliographic Details
Main Authors: Lei CUI, Tong YANG, Ruliang ZHANG, Li MA, Yichen LI
Format: Article
Language:zho
Published: State Grid Energy Research Institute 2022-09-01
Series:Zhongguo dianli
Subjects:
insulated gate bipolar transistor
reverse blocking
field limiting ring
composite terminal
double doped field limiting ring
Online Access:https://www.electricpower.com.cn/CN/10.11930/j.issn.1004-9649.202011058
Tags: Add Tag
No Tags, Be the first to tag this record!

Internet

https://www.electricpower.com.cn/CN/10.11930/j.issn.1004-9649.202011058

Similar Items