Thermoelectric Characterization of Electronic Properties of GaMnAs Nanowires

Nanowires with magnetic doping centers are an exciting candidate for the study of spin physics and proof-of-principle spintronics devices. The required heavy doping can be expected to have a significant impact on the nanowires' electron transport properties. Here, we use thermopower and conduct...

Full description

Saved in:
Bibliographic Details
Main Authors: Phillip M. Wu, Waldomiro Paschoal, Sandeep Kumar, Christian Borschel, Carsten Ronning, Carlo M. Canali, Lars Samuelson, Håkan Pettersson, Heiner Linke
Format: Article
Language:English
Published: Wiley 2012-01-01
Series:Journal of Nanotechnology
Online Access:http://dx.doi.org/10.1155/2012/480813
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1832552268242616320
author Phillip M. Wu
Waldomiro Paschoal
Sandeep Kumar
Christian Borschel
Carsten Ronning
Carlo M. Canali
Lars Samuelson
Håkan Pettersson
Heiner Linke
author_facet Phillip M. Wu
Waldomiro Paschoal
Sandeep Kumar
Christian Borschel
Carsten Ronning
Carlo M. Canali
Lars Samuelson
Håkan Pettersson
Heiner Linke
author_sort Phillip M. Wu
collection DOAJ
description Nanowires with magnetic doping centers are an exciting candidate for the study of spin physics and proof-of-principle spintronics devices. The required heavy doping can be expected to have a significant impact on the nanowires' electron transport properties. Here, we use thermopower and conductance measurements for transport characterization of Ga0.95Mn0.05As nanowires over a broad temperature range. We determine the carrier type (holes) and concentration and find a sharp increase of the thermopower below temperatures of 120 K that can be qualitatively described by a hopping conduction model. However, the unusually large thermopower suggests that additional mechanisms must be considered as well.
format Article
id doaj-art-005e1d4ba98243738ff1eda071f8c35c
institution Kabale University
issn 1687-9503
1687-9511
language English
publishDate 2012-01-01
publisher Wiley
record_format Article
series Journal of Nanotechnology
spelling doaj-art-005e1d4ba98243738ff1eda071f8c35c2025-02-03T05:59:04ZengWileyJournal of Nanotechnology1687-95031687-95112012-01-01201210.1155/2012/480813480813Thermoelectric Characterization of Electronic Properties of GaMnAs NanowiresPhillip M. Wu0Waldomiro Paschoal1Sandeep Kumar2Christian Borschel3Carsten Ronning4Carlo M. Canali5Lars Samuelson6Håkan Pettersson7Heiner Linke8Division of Solid State Physics and The Nanometer Structure Consortium (nmC@LU), Lund University, P.O. Box 118, 221 00 Lund, SwedenDivision of Solid State Physics and The Nanometer Structure Consortium (nmC@LU), Lund University, P.O. Box 118, 221 00 Lund, SwedenDivision of Solid State Physics and The Nanometer Structure Consortium (nmC@LU), Lund University, P.O. Box 118, 221 00 Lund, SwedenInstitute for Solid State Physics, Jena University, Max-Wien-Platz 1, 07743 Jena, GermanyInstitute for Solid State Physics, Jena University, Max-Wien-Platz 1, 07743 Jena, GermanyDivision of Physics, School of Computer Science, Physics and Mathematics, Linnæus University, 39233 Kalmar, SwedenDivision of Solid State Physics and The Nanometer Structure Consortium (nmC@LU), Lund University, P.O. Box 118, 221 00 Lund, SwedenDivision of Solid State Physics and The Nanometer Structure Consortium (nmC@LU), Lund University, P.O. Box 118, 221 00 Lund, SwedenDivision of Solid State Physics and The Nanometer Structure Consortium (nmC@LU), Lund University, P.O. Box 118, 221 00 Lund, SwedenNanowires with magnetic doping centers are an exciting candidate for the study of spin physics and proof-of-principle spintronics devices. The required heavy doping can be expected to have a significant impact on the nanowires' electron transport properties. Here, we use thermopower and conductance measurements for transport characterization of Ga0.95Mn0.05As nanowires over a broad temperature range. We determine the carrier type (holes) and concentration and find a sharp increase of the thermopower below temperatures of 120 K that can be qualitatively described by a hopping conduction model. However, the unusually large thermopower suggests that additional mechanisms must be considered as well.http://dx.doi.org/10.1155/2012/480813
spellingShingle Phillip M. Wu
Waldomiro Paschoal
Sandeep Kumar
Christian Borschel
Carsten Ronning
Carlo M. Canali
Lars Samuelson
Håkan Pettersson
Heiner Linke
Thermoelectric Characterization of Electronic Properties of GaMnAs Nanowires
Journal of Nanotechnology
title Thermoelectric Characterization of Electronic Properties of GaMnAs Nanowires
title_full Thermoelectric Characterization of Electronic Properties of GaMnAs Nanowires
title_fullStr Thermoelectric Characterization of Electronic Properties of GaMnAs Nanowires
title_full_unstemmed Thermoelectric Characterization of Electronic Properties of GaMnAs Nanowires
title_short Thermoelectric Characterization of Electronic Properties of GaMnAs Nanowires
title_sort thermoelectric characterization of electronic properties of gamnas nanowires
url http://dx.doi.org/10.1155/2012/480813
work_keys_str_mv AT phillipmwu thermoelectriccharacterizationofelectronicpropertiesofgamnasnanowires
AT waldomiropaschoal thermoelectriccharacterizationofelectronicpropertiesofgamnasnanowires
AT sandeepkumar thermoelectriccharacterizationofelectronicpropertiesofgamnasnanowires
AT christianborschel thermoelectriccharacterizationofelectronicpropertiesofgamnasnanowires
AT carstenronning thermoelectriccharacterizationofelectronicpropertiesofgamnasnanowires
AT carlomcanali thermoelectriccharacterizationofelectronicpropertiesofgamnasnanowires
AT larssamuelson thermoelectriccharacterizationofelectronicpropertiesofgamnasnanowires
AT hakanpettersson thermoelectriccharacterizationofelectronicpropertiesofgamnasnanowires
AT heinerlinke thermoelectriccharacterizationofelectronicpropertiesofgamnasnanowires