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    Normally Off AlGaN/GaN MIS-HEMTs with Self-Aligned p-GaN Gate and Non-Annealed Ohmic Contacts via Gate-First Fabrication

    Normally Off AlGaN/GaN MIS-HEMTs with Self-Aligned p-GaN Gate and Non-Annealed Ohmic Contacts via Gate-First Fabrication by Yinmiao Yin, Qian Fan, Xianfeng Ni, Chao Guo, Xing Gu

    Published 2025-04-01
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