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    Effects of Gate Stack Structural and Process Defectivity on High-k Dielectric Dependence of NBTI Reliability in 32 nm Technology Node PMOSFETs

    Effects of Gate Stack Structural and Process Defectivity on High-k Dielectric Dependence of NBTI Reliability in 32 nm Technology Node PMOSFETs by H. Hussin, N. Soin, M. F. Bukhori, S. Wan Muhamad Hatta, Y. Abdul Wahab

    Published 2014-01-01
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