MoS₂ BAND GAP MODIFICATION UPON REPLACEMENT OF SULFUR ATOMS BY TELLURIUM ONES by A. V. Krivosheeva, V. L. Shaposhnikov, V. E. Borisenko

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The methodology of modeling of electronic properties of bulk semiconductor compounds by A. V. Krivosheeva, V. L. Shaposhnikov, V. E. Borisenko

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THE INFLUENCE OF DEFECTS ON THE ELECTRONIC PROPERTIES OF STRUCTURES OF LAYERED DICHALCOGENIDES OF REFRACTORY METALS by A. V. Krivosheeva, V. L. Shaposhnikov, A. Yu. Alexeev

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ELECTRONIC AND DYNAMICAL PROPERTIES OF BULK AND LAYERED MoS₂ by A. V. Krivosheeva, V. L. Shaposhnikov, V. E. Borisenko, J. -L. Lazzari

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BANDS STRUCTURE OF 3D and 2D Ca₂Si by V. O. Bogorodz, V. L. Shaposhnikov, A. B. Filonov, B. S. Kolosnicin, D. B. Migas

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Atomic structure, fundamental electronic, optical and magnetic properties of low-dimensional structures of semiconductors by V. E. Borisenko, A. V. Krivosheeva, D. B. Migas, V. A. Pushkarchuk, A. B. Filonov, V. L. Shaposhnikov

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