Showing 1 - 2 results of 2 for search 'Toshihiro Ohki', query time: 0.01s Refine Results
  1. 1
    Effects of indium within a barrier on the gate leakage current in an InAlGaN/GaN high-electron-mobility transistor

    Effects of indium within a barrier on the gate leakage current in an InAlGaN/GaN high-electron-mobility transistor by Atsushi Yamada, Toshihiro Ohki

    Published 2025-01-01
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  2. 2
    AlGaN/GaN HEMT on a free-standing GaN substrate with record 85.2% power-added efficiency at 2.45 GHz

    AlGaN/GaN HEMT on a free-standing GaN substrate with record 85.2% power-added efficiency at 2.45 GHz by Toshihiro Ohki, Atsushi Yamada, Yuichi Minoura, Yusuke Kumazaki, Kenji Saito, Masaru Sato

    Published 2025-01-01
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