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    Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide

    Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide by Jia Ge, Muzhi Tang, Johnson Wong, Zhenhao Zhang, Torsten Dippell, Manfred Doerr, Oliver Hohn, Marco Huber, Peter Wohlfart, Armin G. Aberle, Thomas Mueller

    Published 2014-01-01
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