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    Low Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition

    Low Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition by Teng-Hsiang Chang, Chiao Chang, Yen-Ho Chu, Chien-Chieh Lee, Jenq-Yang Chang, I-Chen Chen, Tomi T. Li

    Published 2014-01-01
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