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    Hydrogen Plasma Treatment for Improving Reliability of In‐Ga‐Zn‐O Transistors Without Side Effects Through Post‐Annealing Process

    Hydrogen Plasma Treatment for Improving Reliability of In‐Ga‐Zn‐O Transistors Without Side Effects Through Post‐Annealing Process by Taewon Seo, Juyoung Yun, Seung‐Mo Kim, Changeon Jin, Seongmin Park, Suwon Seong, Dae Hwan Kang, Byoung Hun Lee, Yoonyoung Chung

    Published 2025-06-01
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