Robust Pareto Transistor Sizing of GaN HEMTs for Millimeter-Wave Applications by Rafael Perez Martinez, Stephen Boyd, Srabanti Chowdhury

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Systematic investigation of AlGaN channels on AlN/sapphire substrates using metal–organic chemical vapor deposition (MOCVD): Toward higher crystallinity and lower surface roughness... by Hadi Sena, Matti Lawton Siukola Thurston, Chuanzhe Meng, Srabanti Chowdhury

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Integration of 150 nm gate length N-polar GaN MIS-HEMT devices with all-around diamond for device-level cooling by Rohith Soman, Mohamadali Malakoutian, Jeong-kyu Kim, Emre Akso, Nirupam Hatui, Christian Wurm, Umesh Mishra, Srabanti Chowdhury

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Lossless Phonon Transition Through GaN‐Diamond and Si‐Diamond Interfaces by Mohamadali Malakoutian, Kelly Woo, Dennis Rich, Ramandeep Mandia, Xiang Zheng, Anna Kasperovich, Devansh Saraswat, Rohith Soman, Youhwan Jo, Thomas Pfeifer, Taesoon Hwang, Henry Aller, Jeongkyu Kim, Junrui Lyu, Janelle Keionna Mabrey, Thomas Andres Rodriguez, James Pomeroy, Patrick E. Hopkins, Samuel Graham, David J. Smith, Subhasish Mitra, Kyeongjae Cho, Martin Kuball, Srabanti Chowdhury

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