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    Enhanced Electro‐Resistance and Tunable Asymmetric Depolarization Behavior in Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction by Bottom Oxide Interfacial Layer

    Enhanced Electro‐Resistance and Tunable Asymmetric Depolarization Behavior in Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction by Bottom Oxide Interfacial Layer by Shuxian Lyu, Xiao Long, Yang Yang, Wei Wei, Yuanxiang Chen, Hong Xie, Bowen Nie, Boping Wang, Yuan Wang, Pengfei Jiang, Tiancheng Gong, Yan Wang, Qing Luo

    Published 2025-03-01
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