Skyrmion-based synaptic element with strain-mediated plasticity by Jasmine Kaur, Sneh Saurabh, Shubham Sahay

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Exploiting drain-erase scheme in ferroelectric FETs for logic-in-memory by Musaib Rafiq, Yogesh Singh Chauhan, Shubham Sahay

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1 Transistor‐Dynamic Random Access Memory as Synaptic Element for Online Learning by MD Yasir Bashir, Pritish Sharma, Shubham Sahay

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Efficient Implementation of Mahalanobis Distance on Ferroelectric FinFET Crossbar for Outlier Detection by Musaib Rafiq, Yogesh Singh Chauhan, Shubham Sahay

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Compact XOR/XNOR-Based Adders and BNNs Utilizing Drain-Erase Scheme in Ferroelectric FETs by Musaib Rafiq, Yogesh Singh Chauhan, Shubham Sahay

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Editorial for the JEDS Special Issue for EDTM 2024 by Nihar Ranjan Mohapatra, Shree Prakash Tiwari, Shubham Sahay, Deleep Nair, Saptarshi Das, Gauri Karve, Nagarajan Raghavan, Abu Sebastian, Tomoya Sanuki

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